Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions

K. M. Kuo; C. Y. Lin; C. T. Lin; G. Chern; C. T. Chao; Lance Horng; J. C. Wu; Teho Wu; C. Y. Huang; H. Ohyama; S. Isogami; M. Tsunoda; M. Takahashi

doi:10.1016/j.ssc.2010.06.008

Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions

K. M. Kuo, C. Y. Lin, C. T. Lin, G. Chern, C. T. Chao, Lance Horng, J. C. Wu, Teho Wu, C. Y. Huang, H. Ohyama, S. Isogami, M. Tsunoda, M. Takahashi

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz3 MHz) and DC bias (-1 to 1 V) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to negative at the relaxation frequency ∼1/RC. A frequencydc bias (fV) "phase diagram" is mapped out to describe the combination effects of the magneto-impedance response. The decay of the tunnel magneto-resistance (TMR) and tunnel magneto-capacitance (TMC) at high voltage is sufficiently reduced by the double-MgO barrier. The V_{1 / 2} (the voltage that magnetic response drops to 1/2 of its maximum) of TMC reaches an average value of ∼1.35 V, which is larger than the V_{1 / 2} of TMR ∼0.95 V, suggesting that the response of TMC is more stable than TMR for high frequency application.

Original language	English
Pages (from-to)	1856-1859
Number of pages	4
Journal	Solid State Communications
Volume	150
Issue number	37-38
DOIs	https://doi.org/10.1016/j.ssc.2010.06.008
Publication status	Published - 2010 Oct

Keywords

A. Magnesium compounds
D. Electric impedance
D. Magnetisation
D. Tunnelling magnetoresistance

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2010.06.008

Cite this

@article{02c03b87e06548ea87769f36614f86ad,

title = "Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions",

abstract = "Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz3 MHz) and DC bias (-1 to 1 V) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to negative at the relaxation frequency ∼1/RC. A frequencydc bias (fV) {"}phase diagram{"} is mapped out to describe the combination effects of the magneto-impedance response. The decay of the tunnel magneto-resistance (TMR) and tunnel magneto-capacitance (TMC) at high voltage is sufficiently reduced by the double-MgO barrier. The V1 / 2 (the voltage that magnetic response drops to 1/2 of its maximum) of TMC reaches an average value of ∼1.35 V, which is larger than the V1 / 2 of TMR ∼0.95 V, suggesting that the response of TMC is more stable than TMR for high frequency application.",

keywords = "A. Magnesium compounds, D. Electric impedance, D. Magnetisation, D. Tunnelling magnetoresistance",

author = "Kuo, {K. M.} and Lin, {C. Y.} and Lin, {C. T.} and G. Chern and Chao, {C. T.} and Lance Horng and Wu, {J. C.} and Teho Wu and Huang, {C. Y.} and H. Ohyama and S. Isogami and M. Tsunoda and M. Takahashi",

year = "2010",

month = oct,

doi = "10.1016/j.ssc.2010.06.008",

language = "English",

volume = "150",

pages = "1856--1859",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "37-38",

}

TY - JOUR

T1 - Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions

AU - Kuo, K. M.

AU - Lin, C. Y.

AU - Lin, C. T.

AU - Chern, G.

AU - Chao, C. T.

AU - Horng, Lance

AU - Wu, J. C.

AU - Wu, Teho

AU - Huang, C. Y.

AU - Ohyama, H.

AU - Isogami, S.

AU - Tsunoda, M.

AU - Takahashi, M.

PY - 2010/10

Y1 - 2010/10

N2 - Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz3 MHz) and DC bias (-1 to 1 V) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to negative at the relaxation frequency ∼1/RC. A frequencydc bias (fV) "phase diagram" is mapped out to describe the combination effects of the magneto-impedance response. The decay of the tunnel magneto-resistance (TMR) and tunnel magneto-capacitance (TMC) at high voltage is sufficiently reduced by the double-MgO barrier. The V1 / 2 (the voltage that magnetic response drops to 1/2 of its maximum) of TMC reaches an average value of ∼1.35 V, which is larger than the V1 / 2 of TMR ∼0.95 V, suggesting that the response of TMC is more stable than TMR for high frequency application.

AB - Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz3 MHz) and DC bias (-1 to 1 V) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to negative at the relaxation frequency ∼1/RC. A frequencydc bias (fV) "phase diagram" is mapped out to describe the combination effects of the magneto-impedance response. The decay of the tunnel magneto-resistance (TMR) and tunnel magneto-capacitance (TMC) at high voltage is sufficiently reduced by the double-MgO barrier. The V1 / 2 (the voltage that magnetic response drops to 1/2 of its maximum) of TMC reaches an average value of ∼1.35 V, which is larger than the V1 / 2 of TMR ∼0.95 V, suggesting that the response of TMC is more stable than TMR for high frequency application.

KW - A. Magnesium compounds

KW - D. Electric impedance

KW - D. Magnetisation

KW - D. Tunnelling magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=77957326879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957326879&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2010.06.008

DO - 10.1016/j.ssc.2010.06.008

M3 - Article

AN - SCOPUS:77957326879

SN - 0038-1098

VL - 150

SP - 1856

EP - 1859

JO - Solid State Communications

JF - Solid State Communications

IS - 37-38

ER -

Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this