TY - JOUR
T1 - Influence of gate voltage on nonlocal resistance in GaAs/ AlGaAs heterostructure at high magnetic fields
AU - Takaoka, S.
AU - Tsukagoshi, K.
AU - Oto, K.
AU - Murase, K.
AU - Takagaki, Y.
AU - Gamo, K.
AU - Namba, S.
N1 - Funding Information:
The authors would like to thank Dr. S. Nishi of Oki Electric Industry Co. Ltd. for providing GaAs/A1GaAs wafers. This work is supportedin part by a Grant-in-Aidf or ScientificR esearcho n the Priority Area "Electron Wave Interference Effects in Mesoscopic Structures" from the Ministry of Education,S ciencea nd Culture. One of the authors (S.T.) acknowledgetsh e support by a Grant-in-Aid for Scientific Research (B) from the Ministry of Education, Science and Culture.
PY - 1993/2
Y1 - 1993/2
N2 - The nonlocal Shubnikov-de Haas (S-dH) resistance has been investigated in a GaAs/AlGaAs wire with Schottky gates across the separation path between current and voltage probes. With decreasing electron concentration below the gate, the up-spin S-dH oscillation peak vanishes at higher electron concentration than the down-spin peak. This can be understood by the fact that the bulk current at the down-spin peak actually consists of both down- and up-spin states and that the one at the up-spin peak consists mostly of the up-spin state. Further the influence of extra probes, which have ostensibly nothing to do with the four-terminal resistance, has been studied by disconnecting the extra probes electrically by the gate across the extra terminal. When the extra probe is disconnected, both normal and nonlocal S-dH oscillation peaks at high magnetic fields are altered.
AB - The nonlocal Shubnikov-de Haas (S-dH) resistance has been investigated in a GaAs/AlGaAs wire with Schottky gates across the separation path between current and voltage probes. With decreasing electron concentration below the gate, the up-spin S-dH oscillation peak vanishes at higher electron concentration than the down-spin peak. This can be understood by the fact that the bulk current at the down-spin peak actually consists of both down- and up-spin states and that the one at the up-spin peak consists mostly of the up-spin state. Further the influence of extra probes, which have ostensibly nothing to do with the four-terminal resistance, has been studied by disconnecting the extra probes electrically by the gate across the extra terminal. When the extra probe is disconnected, both normal and nonlocal S-dH oscillation peaks at high magnetic fields are altered.
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U2 - 10.1016/0921-4526(93)90314-V
DO - 10.1016/0921-4526(93)90314-V
M3 - Article
AN - SCOPUS:0027542826
SN - 0921-4526
VL - 184
SP - 21
EP - 25
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1-4
ER -