TY - GEN
T1 - Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions
AU - Kobayashi, Daisuke
AU - Kakehashi, Yuya
AU - Hirose, Kazuyuki
AU - Onoda, Shinobu
AU - Makino, Takahiro
AU - Ohshima, Takeshi
AU - Ikeda, Shoji
AU - Yamanouchi, Michihiko
AU - Sato, Hideo
AU - Enobio, Eli Christopher
AU - Endoh, Tetsuo
AU - Ohno, Hideo
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2013/10/28
Y1 - 2013/10/28
N2 - A non-volatile memory element that is called a perpendicular-anisotropy magnetic tunnel junction has been fabricated in a CoFeB/MgO/CoFeB film stack technology. It exhibits two stable resistance values, high or low, depending on the relative direction of magnetization of the two ferromagnetic CoFeB layers. After programmed into the high resistance state with a current injection scheme based on the spin transfer torque theory, the tunnel junction has been exposed to 15-MeV Si ions in different voltage stress conditions. It has been observed that the tested structure remains in the programmed high resistance state after received the bombardments of several tens of Si ions and more, even under the stressed situations. A time-domain analysis has proven that this result is due to the perfect immunity of the tested magnetic tunnel junction to single event upsets. A resistance degradation due to the heavy-ion irradiation has been detected through a precise parameter analysis based on a tunneling theory but negligibly small, 1%.
AB - A non-volatile memory element that is called a perpendicular-anisotropy magnetic tunnel junction has been fabricated in a CoFeB/MgO/CoFeB film stack technology. It exhibits two stable resistance values, high or low, depending on the relative direction of magnetization of the two ferromagnetic CoFeB layers. After programmed into the high resistance state with a current injection scheme based on the spin transfer torque theory, the tunnel junction has been exposed to 15-MeV Si ions in different voltage stress conditions. It has been observed that the tested structure remains in the programmed high resistance state after received the bombardments of several tens of Si ions and more, even under the stressed situations. A time-domain analysis has proven that this result is due to the perfect immunity of the tested magnetic tunnel junction to single event upsets. A resistance degradation due to the heavy-ion irradiation has been detected through a precise parameter analysis based on a tunneling theory but negligibly small, 1%.
KW - Ion radiation effects
KW - magnetic memory
KW - perpendicular magnetic anisotropy
KW - spin polarized transport
KW - tunneling magnetoresistance
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U2 - 10.1109/RADECS.2013.6937425
DO - 10.1109/RADECS.2013.6937425
M3 - Conference contribution
AN - SCOPUS:84949925529
T3 - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
BT - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013
Y2 - 23 September 2013 through 27 September 2013
ER -