Influence of high-magnetic-field on dislocation-oxygen interaction in silicon

I. Yonenaga, K. Takahashi, T. Taishi, Y. Ohno

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Influence of high-magnetic-field treatments on dislocation vs. oxygen impurity interaction in Si was investigated. The locking strength of oxygen impurities against dislocations decreased with increase in exposed magnetic field up to 10 T at room temperature and 700 °C. Such phenomena could not be detected in high-purity float-zone-grown silicon crystals. These results suggest a spin-dependent solid-state reaction in impurity-dislocation interaction, which seems a possibility of modification of atomic configuration and displacement of crystalline defects in semiconductors.

Original languageEnglish
Pages (from-to)148-150
Number of pages3
JournalPhysica B: Condensed Matter
Publication statusPublished - 2007 Dec 15


  • Defect interaction
  • Dislocations
  • High-magnetic field
  • Impurity
  • Silicon


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