Influence of high-magnetic-field on dislocation-oxygen interaction in silicon

I. Yonenaga; K. Takahashi; T. Taishi; Y. Ohno

doi:10.1016/j.physb.2007.08.133

Influence of high-magnetic-field on dislocation-oxygen interaction in silicon

I. Yonenaga, K. Takahashi, T. Taishi, Y. Ohno

Tohoku University

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Influence of high-magnetic-field treatments on dislocation vs. oxygen impurity interaction in Si was investigated. The locking strength of oxygen impurities against dislocations decreased with increase in exposed magnetic field up to 10 T at room temperature and 700 °C. Such phenomena could not be detected in high-purity float-zone-grown silicon crystals. These results suggest a spin-dependent solid-state reaction in impurity-dislocation interaction, which seems a possibility of modification of atomic configuration and displacement of crystalline defects in semiconductors.

Original language	English
Pages (from-to)	148-150
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	401-402
DOIs	https://doi.org/10.1016/j.physb.2007.08.133
Publication status	Published - 2007 Dec 15

Keywords

Defect interaction
Dislocations
High-magnetic field
Impurity
Silicon

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10.1016/j.physb.2007.08.133

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abstract = "Influence of high-magnetic-field treatments on dislocation vs. oxygen impurity interaction in Si was investigated. The locking strength of oxygen impurities against dislocations decreased with increase in exposed magnetic field up to 10 T at room temperature and 700 °C. Such phenomena could not be detected in high-purity float-zone-grown silicon crystals. These results suggest a spin-dependent solid-state reaction in impurity-dislocation interaction, which seems a possibility of modification of atomic configuration and displacement of crystalline defects in semiconductors.",

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author = "I. Yonenaga and K. Takahashi and T. Taishi and Y. Ohno",

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doi = "10.1016/j.physb.2007.08.133",

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T1 - Influence of high-magnetic-field on dislocation-oxygen interaction in silicon

AU - Yonenaga, I.

AU - Takahashi, K.

AU - Taishi, T.

AU - Ohno, Y.

PY - 2007/12/15

Y1 - 2007/12/15

N2 - Influence of high-magnetic-field treatments on dislocation vs. oxygen impurity interaction in Si was investigated. The locking strength of oxygen impurities against dislocations decreased with increase in exposed magnetic field up to 10 T at room temperature and 700 °C. Such phenomena could not be detected in high-purity float-zone-grown silicon crystals. These results suggest a spin-dependent solid-state reaction in impurity-dislocation interaction, which seems a possibility of modification of atomic configuration and displacement of crystalline defects in semiconductors.

AB - Influence of high-magnetic-field treatments on dislocation vs. oxygen impurity interaction in Si was investigated. The locking strength of oxygen impurities against dislocations decreased with increase in exposed magnetic field up to 10 T at room temperature and 700 °C. Such phenomena could not be detected in high-purity float-zone-grown silicon crystals. These results suggest a spin-dependent solid-state reaction in impurity-dislocation interaction, which seems a possibility of modification of atomic configuration and displacement of crystalline defects in semiconductors.

KW - Defect interaction

KW - Dislocations

KW - High-magnetic field

KW - Impurity

KW - Silicon

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VL - 401-402

SP - 148

EP - 150

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Influence of high-magnetic-field on dislocation-oxygen interaction in silicon

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Keywords

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