The influence of impact-ionized holes accumulating in the device was studied for InP-based InAlAs/InGaAs HEMTs using light irradiation experiments. Two parasitic phenomena arise from the generation of electron-hole pairs and subsequent accumulation of holes in the body of the device: The hole accumulation in the source region causes the decrease in the source resistance, which eliminates the kink effect. The hole accumulation in the gate region shifts the threshold voltage. This could be a positive feedback that increases the drain current at the on-state breakdown of the device.
|Number of pages||4|
|Publication status||Published - 2001|
|Event||2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan|
Duration: 2001 May 14 → 2001 May 18
|Conference||2001 International Conference on Indium Phosphide and Related Materials|
|Period||01/5/14 → 01/5/18|