TY - JOUR
T1 - Influence of hydrogen radicals on the reduction of carbon incorporation into chemical beam epitaxial GaAs
AU - Goto, S.
AU - Nomura, Y.
AU - Morishita, Y.
AU - Katayama, Y.
AU - Ohno, H.
N1 - Funding Information:
The authors wish to thank Drs. H. Sumiya and H. Tamura of Hitachi Instruments Engineering Co., Ltd., for the SIMS analysis. They are also grateful to Drs. N. Ikoma, M. Yamada, M. Tamara and I. Hayashi for helpful discussions and continuous encouragement. The work carried out at Hokkaido University was partly supported by a Grant-in-Aid for Scientific Research on Priority Areas, “Crystal Growth Mechanism in Atomic Scale” (No. 5211220) from the Ministry of Education, Science and Culture.
PY - 1994/12/2
Y1 - 1994/12/2
N2 - In order to investigate the influence of hydrogen radicals (H·) on carbon incorporation into chemical-beam epitaxial GaAs, H· generated by flowing H2 through a hot tungsten filament was intentionally introduced into a trimethylgallium (TMGa)-AsH3 (cracked at 850°C) and a TMGa (or metal Ga)-trisdimethylaminoarsine (TDMAAs) system. In the case of the TMGa-AsH3-H· system, the residual carbon concentrations, measured by secondary ion mass spectrometry, in epitaxial layers grown at 490°C rapidly decreased along with an increase in the H2 flow rate in a low-flow region, and saturated at around 1 × 1018 cm-3 in a higher flow region. On the other hand, carbon incorporation (6 × 1017 cm-3 at 490°C) in TMGa-TDMAAs was less than that in TMGa-AsH3. Since no residual carbon over the detection limit ((1-2) × 1017 cm-3) was detected in metal Ga-TDMAAs, the carbon in TMGa-TDMAAs was clarified as having been derived from TMGa. However, the introduction of H· did not reduce the carbon incorporation in TMGa-TDMAAs. Influence of injected H· on the carbon reduction is discussed in relation to the adsorption of uncracked H2 and surface species derived from TDMAAs on a growing surface.
AB - In order to investigate the influence of hydrogen radicals (H·) on carbon incorporation into chemical-beam epitaxial GaAs, H· generated by flowing H2 through a hot tungsten filament was intentionally introduced into a trimethylgallium (TMGa)-AsH3 (cracked at 850°C) and a TMGa (or metal Ga)-trisdimethylaminoarsine (TDMAAs) system. In the case of the TMGa-AsH3-H· system, the residual carbon concentrations, measured by secondary ion mass spectrometry, in epitaxial layers grown at 490°C rapidly decreased along with an increase in the H2 flow rate in a low-flow region, and saturated at around 1 × 1018 cm-3 in a higher flow region. On the other hand, carbon incorporation (6 × 1017 cm-3 at 490°C) in TMGa-TDMAAs was less than that in TMGa-AsH3. Since no residual carbon over the detection limit ((1-2) × 1017 cm-3) was detected in metal Ga-TDMAAs, the carbon in TMGa-TDMAAs was clarified as having been derived from TMGa. However, the introduction of H· did not reduce the carbon incorporation in TMGa-TDMAAs. Influence of injected H· on the carbon reduction is discussed in relation to the adsorption of uncracked H2 and surface species derived from TDMAAs on a growing surface.
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U2 - 10.1016/0022-0248(94)90447-2
DO - 10.1016/0022-0248(94)90447-2
M3 - Article
AN - SCOPUS:0028762128
SN - 0022-0248
VL - 144
SP - 126
EP - 132
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3-4
ER -