TY - JOUR
T1 - Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates
AU - Ohtani, K.
AU - Sato, A.
AU - Ohno, Y.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Funding Information:
This work was partly supported by “Research for the Furture Program” from the Japan Society for the Promotion of Science (JSPS-RFTF 97P00202), and by grants-in-aid for the Scientific Research (A) (No. 11355012) from the Ministry of Education, Science, Sports and Culture, Japan.
PY - 2000/6
Y1 - 2000/6
N2 - Optical properties of InAs/AlSb multiquantum wells (MQWs) epitaxially grown on GaAs substrates with a buffer layer are shown to be dependent on the type of the interface bond and the buffer layer material. Combinations of the two possible interface bond configurations (In-Sb and Al-As) with the two buffer layer materials (InAs and AlSb) were prepared by molecular beam epitaxy. The photoluminescence intensity (PL) of MQWs was considerably higher for two kinds of structures: (1) the In-Sb bond with the AlSb buffer or (2) the Al-As bond with the InAs buffer. The two other possible combinations resulted in a drastically reduced PL intensity. X-ray diffraction (XRD) measurements revealed that lattice matching between the average lattice constant of MQW and the buffer layer plays a key role in determining the PL intensity.
AB - Optical properties of InAs/AlSb multiquantum wells (MQWs) epitaxially grown on GaAs substrates with a buffer layer are shown to be dependent on the type of the interface bond and the buffer layer material. Combinations of the two possible interface bond configurations (In-Sb and Al-As) with the two buffer layer materials (InAs and AlSb) were prepared by molecular beam epitaxy. The photoluminescence intensity (PL) of MQWs was considerably higher for two kinds of structures: (1) the In-Sb bond with the AlSb buffer or (2) the Al-As bond with the InAs buffer. The two other possible combinations resulted in a drastically reduced PL intensity. X-ray diffraction (XRD) measurements revealed that lattice matching between the average lattice constant of MQW and the buffer layer plays a key role in determining the PL intensity.
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U2 - 10.1016/S0169-4332(00)00106-9
DO - 10.1016/S0169-4332(00)00106-9
M3 - Conference article
AN - SCOPUS:0034205918
SN - 0169-4332
VL - 159
SP - 313
EP - 317
JO - Applied Surface Science
JF - Applied Surface Science
T2 - 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3)
Y2 - 25 October 1999 through 29 October 1999
ER -