TY - JOUR
T1 - Influence of interface modifications on carrier mobilities in rubrene single crystal ambipolar field-effect transistors
AU - Wang, Yan
AU - Kumashiro, Ryotaro
AU - Nouchi, Ryo
AU - Komatsu, Naoya
AU - Tanigaki, Katsumi
N1 - Funding Information:
This work was supported by Grants-in-Aid (Grant No. 18204030, 19014001, 18651075, and 18204032) for Scientific Research on Priority Areas (“New Materials Science Using Regulated Nano Spaces-Strategy in Ubiquitous Elements”) from the Ministry of Education, Culture, Sports, Science and Technology of Japan. The research was also partially supported by Tohoku University GCOE program. Y.W. thanks the Japan Society for the Promotion of Science (JSPS) for supporting the scientific research (Grant No. P08372).
PY - 2009
Y1 - 2009
N2 - Carrier mobilities in ambipolar field-effect transistors (FETs) are studied using a rubrene single crystal assembled with Au/Ca electrodes and SiO 2 gate insulators modified by polymethylmethacrylate (PMMA), parylene-C, and hexamethyldisilazane (HMDS). The experimental results are interpreted in terms of the two interfacial efficiency parameters, the injection, and the transport efficiencies. The efficiency of electron carrier injection can be evaluated using Au-Au and Au-Ca electrodes. The efficiency of electron carrier transport was compared among the device with PMMA, parylene-C, and HMDS modification layer. The shallow trap density at the semiconductor-gate dielectric interface is shown not to be the most important factor for controlling FET mobilities. Instead, the surface polarization associated with the surface molecular structure is proposed to be another possible parameter. Furthermore, the shift of light emitting with applied gate voltage was observed in a device with PMMA modified insulator and Au-Ca asymmetric metals.
AB - Carrier mobilities in ambipolar field-effect transistors (FETs) are studied using a rubrene single crystal assembled with Au/Ca electrodes and SiO 2 gate insulators modified by polymethylmethacrylate (PMMA), parylene-C, and hexamethyldisilazane (HMDS). The experimental results are interpreted in terms of the two interfacial efficiency parameters, the injection, and the transport efficiencies. The efficiency of electron carrier injection can be evaluated using Au-Au and Au-Ca electrodes. The efficiency of electron carrier transport was compared among the device with PMMA, parylene-C, and HMDS modification layer. The shallow trap density at the semiconductor-gate dielectric interface is shown not to be the most important factor for controlling FET mobilities. Instead, the surface polarization associated with the surface molecular structure is proposed to be another possible parameter. Furthermore, the shift of light emitting with applied gate voltage was observed in a device with PMMA modified insulator and Au-Ca asymmetric metals.
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U2 - 10.1063/1.3153946
DO - 10.1063/1.3153946
M3 - Article
AN - SCOPUS:67650227613
SN - 0021-8979
VL - 105
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 12
M1 - 124912
ER -