Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon

Lu Chung Chuang; Takanori Kiguchi; Yumiko Kodama; Kensaku Maeda; Keiji Shiga; Haruhiko Morito; Kozo Fujiwara

doi:10.1016/j.scriptamat.2019.07.018

Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon

Lu Chung Chuang, Takanori Kiguchi, Yumiko Kodama, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Small-angle grain boundary (SAGB) growth in multicrystalline Si was observed in situ during directional solidification, and the misorientation and boundary structure were analyzed by electron backscatter diffraction and high-resolution transmission electron microscopy. It was found that SAGBs change their orientation in order to reduce the number of grain boundary dislocations and thus the energy. This suggests that grain boundary dislocations have an influence on SAGB behavior during solidification.

Original language	English
Pages (from-to)	105-109
Number of pages	5
Journal	Scripta Materialia
Volume	172
DOIs	https://doi.org/10.1016/j.scriptamat.2019.07.018
Publication status	Published - 2019 Nov

Keywords

Directional solidification
Grain boundary
Multicrystalline Si

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2019.07.018

Cite this

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title = "Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon",

abstract = "Small-angle grain boundary (SAGB) growth in multicrystalline Si was observed in situ during directional solidification, and the misorientation and boundary structure were analyzed by electron backscatter diffraction and high-resolution transmission electron microscopy. It was found that SAGBs change their orientation in order to reduce the number of grain boundary dislocations and thus the energy. This suggests that grain boundary dislocations have an influence on SAGB behavior during solidification.",

keywords = "Directional solidification, Grain boundary, Multicrystalline Si",

author = "Chuang, {Lu Chung} and Takanori Kiguchi and Yumiko Kodama and Kensaku Maeda and Keiji Shiga and Haruhiko Morito and Kozo Fujiwara",

note = "Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: {\textcopyright} 2019",

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month = nov,

doi = "10.1016/j.scriptamat.2019.07.018",

language = "English",

volume = "172",

pages = "105--109",

journal = "Scripta Materialia",

issn = "1359-6462",

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T1 - Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon

AU - Chuang, Lu Chung

AU - Kiguchi, Takanori

AU - Kodama, Yumiko

AU - Maeda, Kensaku

AU - Shiga, Keiji

AU - Morito, Haruhiko

AU - Fujiwara, Kozo

N1 - Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: © 2019

PY - 2019/11

Y1 - 2019/11

N2 - Small-angle grain boundary (SAGB) growth in multicrystalline Si was observed in situ during directional solidification, and the misorientation and boundary structure were analyzed by electron backscatter diffraction and high-resolution transmission electron microscopy. It was found that SAGBs change their orientation in order to reduce the number of grain boundary dislocations and thus the energy. This suggests that grain boundary dislocations have an influence on SAGB behavior during solidification.

AB - Small-angle grain boundary (SAGB) growth in multicrystalline Si was observed in situ during directional solidification, and the misorientation and boundary structure were analyzed by electron backscatter diffraction and high-resolution transmission electron microscopy. It was found that SAGBs change their orientation in order to reduce the number of grain boundary dislocations and thus the energy. This suggests that grain boundary dislocations have an influence on SAGB behavior during solidification.

KW - Directional solidification

KW - Grain boundary

KW - Multicrystalline Si

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DO - 10.1016/j.scriptamat.2019.07.018

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JO - Scripta Materialia

JF - Scripta Materialia

ER -

Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon

Abstract

Keywords

ASJC Scopus subject areas

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