TY - GEN
T1 - Influence of moisture on the CVD formation of a MnOx barrier layer
AU - Neishi, K.
AU - Matsumoto, K.
AU - Sato, H.
AU - Itoh, H.
AU - Hosaka, S.
AU - Koike, J.
PY - 2009
Y1 - 2009
N2 - We investigated the effects of moisture on the deposition behavior of the MnOx diffusion barrier layer on TEOS-oxide substrates. The moisture effects were investigated in two ways: (1) with and without the introduction of H2O gas in the reaction chamber and (2) with and without pre-annealing of the TEOS-oxide substrates without introducing H2O gas. A thick crystalline MnOx layer was formed under the presence of H2O gas. A thin amorphous MnOx layer was formed without H2O gas. Without H2O gas in the reaction chamber, the thickness of the MnOx layer was slightly thinner on the substrate with pre-annealing than on the substrate without annealing.
AB - We investigated the effects of moisture on the deposition behavior of the MnOx diffusion barrier layer on TEOS-oxide substrates. The moisture effects were investigated in two ways: (1) with and without the introduction of H2O gas in the reaction chamber and (2) with and without pre-annealing of the TEOS-oxide substrates without introducing H2O gas. A thick crystalline MnOx layer was formed under the presence of H2O gas. A thin amorphous MnOx layer was formed without H2O gas. Without H2O gas in the reaction chamber, the thickness of the MnOx layer was slightly thinner on the substrate with pre-annealing than on the substrate without annealing.
UR - http://www.scopus.com/inward/record.url?scp=70349961370&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349961370&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:70349961370
SN - 9781605111254
T3 - Advanced Metallization Conference (AMC)
SP - 307
EP - 311
BT - Advanced Metallization Conference 2008, AMC 2008
T2 - Advanced Metallization Conference 2008, AMC 2008
Y2 - 23 September 2008 through 25 September 2008
ER -