Influence of NiSi on parasitic resistance fluctuation of FinFETs

T. Matsukawa; Y. X. Liu; Kazuhiko Endo; J. Tsukada; Y. Ishikawa; H. Yamauchi; S. O'Uchi; K. Sakamoto; M. Masahara

doi:10.1109/VTSA.2011.5872256

Influence of NiSi on parasitic resistance fluctuation of FinFETs

T. Matsukawa, Y. X. Liu, Kazuhiko Endo, J. Tsukada, Y. Ishikawa, H. Yamauchi, S. O'Uchi, K. Sakamoto, M. Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Influence of NiSi S/D incorporation on parasitic resistance (R _para) fluctuation of FinFETs was investigated in detail. While the NiSi S/D enhances the on current of the FinFET thanks to the R_para reduction, it also causes additional R_para fluctuation. Through analysis of correlation of R_para with fin thickness and gate-to-NiSi offset fluctuation, it is revealed that NiSi/n-Si contact resistance component could cause the R_para fluctuation.

Original language	English
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	118-119
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2011.5872256
Publication status	Published - 2011 Jul 11
Externally published	Yes
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China Duration: 2011 Apr 25 → 2011 Apr 27

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	11/4/25 → 11/4/27

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/VTSA.2011.5872256

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Matsukawa, T., Liu, Y. X., Endo, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., O'Uchi, S., Sakamoto, K., & Masahara, M. (2011). Influence of NiSi on parasitic resistance fluctuation of FinFETs. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 118-119). [5872256] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872256

Influence of NiSi on parasitic resistance fluctuation of FinFETs. / Matsukawa, T.; Liu, Y. X.; Endo, Kazuhiko et al.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 118-119 5872256 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsukawa, T, Liu, YX, Endo, K, Tsukada, J, Ishikawa, Y, Yamauchi, H, O'Uchi, S, Sakamoto, K & Masahara, M 2011, Influence of NiSi on parasitic resistance fluctuation of FinFETs. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872256, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 118-119, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, Province of China, 11/4/25. https://doi.org/10.1109/VTSA.2011.5872256

Matsukawa T, Liu YX, Endo K, Tsukada J, Ishikawa Y, Yamauchi H et al. Influence of NiSi on parasitic resistance fluctuation of FinFETs. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 118-119. 5872256. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2011.5872256

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title = "Influence of NiSi on parasitic resistance fluctuation of FinFETs",

abstract = "Influence of NiSi S/D incorporation on parasitic resistance (R para) fluctuation of FinFETs was investigated in detail. While the NiSi S/D enhances the on current of the FinFET thanks to the Rpara reduction, it also causes additional Rpara fluctuation. Through analysis of correlation of Rpara with fin thickness and gate-to-NiSi offset fluctuation, it is revealed that NiSi/n-Si contact resistance component could cause the Rpara fluctuation.",

author = "T. Matsukawa and Liu, {Y. X.} and Kazuhiko Endo and J. Tsukada and Y. Ishikawa and H. Yamauchi and S. O'Uchi and K. Sakamoto and M. Masahara",

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AU - Liu, Y. X.

AU - Endo, Kazuhiko

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AU - Ishikawa, Y.

AU - Yamauchi, H.

AU - O'Uchi, S.

AU - Sakamoto, K.

AU - Masahara, M.

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N2 - Influence of NiSi S/D incorporation on parasitic resistance (R para) fluctuation of FinFETs was investigated in detail. While the NiSi S/D enhances the on current of the FinFET thanks to the Rpara reduction, it also causes additional Rpara fluctuation. Through analysis of correlation of Rpara with fin thickness and gate-to-NiSi offset fluctuation, it is revealed that NiSi/n-Si contact resistance component could cause the Rpara fluctuation.

AB - Influence of NiSi S/D incorporation on parasitic resistance (R para) fluctuation of FinFETs was investigated in detail. While the NiSi S/D enhances the on current of the FinFET thanks to the Rpara reduction, it also causes additional Rpara fluctuation. Through analysis of correlation of Rpara with fin thickness and gate-to-NiSi offset fluctuation, it is revealed that NiSi/n-Si contact resistance component could cause the Rpara fluctuation.

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Influence of NiSi on parasitic resistance fluctuation of FinFETs

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