Influence of oxide semiconductor thickness on thin-film transistor characteristics

Mitsuru Nakata, Hiroshi Tsuji, Hiroto Sato, Yoshiki Nakajima, Yoshihide Fujisaki, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


We discuss here the influence of oxide semiconductor thickness on thin-film transistor (TFT) characteristics. We have determined this influence by measuring the transfer characteristics of amorphous InGaZnO (IGZO) TFTs having various IGZO thicknesses and using a simple method to calculate the depletion width in IGZO films. ON current was nearly constant with respect to IGZO thickness because it depended on a high electron density in an accumulation region sufficiently thinner than the IGZO film. The threshold voltage shifted negatively with increasing IGZO thickness, which indicates that a thicker IGZO film requires a higher negative gate voltage for it to be fully depleted. Calculation results suggest that threshold voltage variation due to IGZO thickness variation increases with increasing donor density and IGZO thickness.

Original languageEnglish
Article number03BB04
JournalJapanese Journal of Applied Physics
Issue number3 PART 2
Publication statusPublished - 2013 Mar


Dive into the research topics of 'Influence of oxide semiconductor thickness on thin-film transistor characteristics'. Together they form a unique fingerprint.

Cite this