Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN

Yasuo Koide; D. E. Walker; B. D. White; L. J. Brillson; T. Itoh; R. L. McCreery; Masanori Murakami; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1002/pssb.200303279

Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN

Yasuo Koide, D. E. Walker, B. D. White, L. J. Brillson, T. Itoh, R. L. McCreery, Masanori Murakami, S. Kamiyama, H. Amano, I. Akasaki

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Mg-doped GaN epilayers are analyzed by Raman and low-energy electron-excited nanoluminescence (LEEN) spectroscopies before and after oxygen ambient annealing at temperatures from 450 to 550 °C. Annealing as low as 450 °C shows the appearance of a local vibrational mode of the Mg _Ga acceptor. Correspondingly, LEEN emission at 2.8 eV increases and that at 3.27 eV decreases after annealing in oxygen ambient. On the other hand, electron beam treatment decreases 2.8 eV emission and increases 3.27 eV emission. These luminescence properties are explained by a donor-acceptor pairs transition model due to hydrogen-related deep and shallow donors and Mg _Ga acceptor.

Original language	English
Pages (from-to)	356-359
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	240
Issue number	2
DOIs	https://doi.org/10.1002/pssb.200303279
Publication status	Published - 2003 Nov 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssb.200303279

Cite this

@article{aefbc573f85049f5ad63e443f9e6ae0c,

title = "Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN",

abstract = "Mg-doped GaN epilayers are analyzed by Raman and low-energy electron-excited nanoluminescence (LEEN) spectroscopies before and after oxygen ambient annealing at temperatures from 450 to 550 °C. Annealing as low as 450 °C shows the appearance of a local vibrational mode of the Mg Ga acceptor. Correspondingly, LEEN emission at 2.8 eV increases and that at 3.27 eV decreases after annealing in oxygen ambient. On the other hand, electron beam treatment decreases 2.8 eV emission and increases 3.27 eV emission. These luminescence properties are explained by a donor-acceptor pairs transition model due to hydrogen-related deep and shallow donors and Mg Ga acceptor.",

author = "Yasuo Koide and Walker, {D. E.} and White, {B. D.} and Brillson, {L. J.} and T. Itoh and McCreery, {R. L.} and Masanori Murakami and S. Kamiyama and H. Amano and I. Akasaki",

year = "2003",

month = nov,

day = "1",

doi = "10.1002/pssb.200303279",

language = "English",

volume = "240",

pages = "356--359",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "2",

}

TY - JOUR

T1 - Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN

AU - Koide, Yasuo

AU - Walker, D. E.

AU - White, B. D.

AU - Brillson, L. J.

AU - Itoh, T.

AU - McCreery, R. L.

AU - Murakami, Masanori

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - Mg-doped GaN epilayers are analyzed by Raman and low-energy electron-excited nanoluminescence (LEEN) spectroscopies before and after oxygen ambient annealing at temperatures from 450 to 550 °C. Annealing as low as 450 °C shows the appearance of a local vibrational mode of the Mg Ga acceptor. Correspondingly, LEEN emission at 2.8 eV increases and that at 3.27 eV decreases after annealing in oxygen ambient. On the other hand, electron beam treatment decreases 2.8 eV emission and increases 3.27 eV emission. These luminescence properties are explained by a donor-acceptor pairs transition model due to hydrogen-related deep and shallow donors and Mg Ga acceptor.

AB - Mg-doped GaN epilayers are analyzed by Raman and low-energy electron-excited nanoluminescence (LEEN) spectroscopies before and after oxygen ambient annealing at temperatures from 450 to 550 °C. Annealing as low as 450 °C shows the appearance of a local vibrational mode of the Mg Ga acceptor. Correspondingly, LEEN emission at 2.8 eV increases and that at 3.27 eV decreases after annealing in oxygen ambient. On the other hand, electron beam treatment decreases 2.8 eV emission and increases 3.27 eV emission. These luminescence properties are explained by a donor-acceptor pairs transition model due to hydrogen-related deep and shallow donors and Mg Ga acceptor.

UR - http://www.scopus.com/inward/record.url?scp=0344926520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344926520&partnerID=8YFLogxK

U2 - 10.1002/pssb.200303279

DO - 10.1002/pssb.200303279

M3 - Article

AN - SCOPUS:0344926520

SN - 0370-1972

VL - 240

SP - 356

EP - 359

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 2

ER -

Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this