Mg-doped GaN epilayers are analyzed by Raman and low-energy electron-excited nanoluminescence (LEEN) spectroscopies before and after oxygen ambient annealing at temperatures from 450 to 550 °C. Annealing as low as 450 °C shows the appearance of a local vibrational mode of the Mg Ga acceptor. Correspondingly, LEEN emission at 2.8 eV increases and that at 3.27 eV decreases after annealing in oxygen ambient. On the other hand, electron beam treatment decreases 2.8 eV emission and increases 3.27 eV emission. These luminescence properties are explained by a donor-acceptor pairs transition model due to hydrogen-related deep and shallow donors and Mg Ga acceptor.
|Number of pages||4|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - 2003 Nov 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics