Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN

Yasuo Koide, D. E. Walker, B. D. White, L. J. Brillson, T. Itoh, R. L. McCreery, Masanori Murakami, S. Kamiyama, H. Amano, I. Akasaki

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Mg-doped GaN epilayers are analyzed by Raman and low-energy electron-excited nanoluminescence (LEEN) spectroscopies before and after oxygen ambient annealing at temperatures from 450 to 550 °C. Annealing as low as 450 °C shows the appearance of a local vibrational mode of the Mg Ga acceptor. Correspondingly, LEEN emission at 2.8 eV increases and that at 3.27 eV decreases after annealing in oxygen ambient. On the other hand, electron beam treatment decreases 2.8 eV emission and increases 3.27 eV emission. These luminescence properties are explained by a donor-acceptor pairs transition model due to hydrogen-related deep and shallow donors and Mg Ga acceptor.

Original languageEnglish
Pages (from-to)356-359
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number2
Publication statusPublished - 2003 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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