TY - JOUR
T1 - Influence of secondary electron detection efficiency on controllability of dopant ion number in single ion implantation
AU - Shinada, Takahiro
AU - Ishikawa, Atsuki
AU - Fujita, Makoto
AU - Yamashita, Keisuke
AU - Ohdomari, Iwao
PY - 1999/6
Y1 - 1999/6
N2 - The single ion implantation (SII) technique has been developed for the purpose of suppressing the fluctuation of the dopant ion number in semiconductor fine structures. It is based on a focused ion beam with a chopping electrode for the extraction of single ions, which enables implanting of dopant atoms one by one into a target. The influence of secondary electron detection efficiency, which is the key technology in SII, on the controllability of ion number has been investigated in this study. The measured sheet electron concentration coincides well with that estimated by taking the detection efficiency into account.
AB - The single ion implantation (SII) technique has been developed for the purpose of suppressing the fluctuation of the dopant ion number in semiconductor fine structures. It is based on a focused ion beam with a chopping electrode for the extraction of single ions, which enables implanting of dopant atoms one by one into a target. The influence of secondary electron detection efficiency, which is the key technology in SII, on the controllability of ion number has been investigated in this study. The measured sheet electron concentration coincides well with that estimated by taking the detection efficiency into account.
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U2 - 10.1143/jjap.38.3419
DO - 10.1143/jjap.38.3419
M3 - Article
AN - SCOPUS:0032679455
SN - 0021-4922
VL - 38
SP - 3419
EP - 3421
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6 A
ER -