Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

T. Suemasu; Y. Negishi; K. Takakura; F. Hasegawa; Toyohiro Chikyo

doi:10.1063/1.1405001

Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

T. Suemasu, Y. Negishi, K. Takakura, F. Hasegawa, Toyohiro Chikyo

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We have fabricated Si/β-FeSi₂ particles/Si structures by reactive deposition epitaxy for β-FeSi₂ and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi₂ strongly depended on MBE-Si growth temperature for embedding β-FeSi₂ in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi₂ active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi₂ from which PL was observed was about 9% longer than that of β-FeSi₂ without PL or of bulk β-FeSi₂.

Original language	English
Pages (from-to)	1804-1806
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	12
DOIs	https://doi.org/10.1063/1.1405001
Publication status	Published - 2001 Sept 17
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1405001

Cite this

@article{55ae914c879e495fbc3b2b5c5edbd2b7,

title = "Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes",

abstract = "We have fabricated Si/β-FeSi2 particles/Si structures by reactive deposition epitaxy for β-FeSi2 and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi2 strongly depended on MBE-Si growth temperature for embedding β-FeSi2 in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi2 active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi2 from which PL was observed was about 9% longer than that of β-FeSi2 without PL or of bulk β-FeSi2.",

author = "T. Suemasu and Y. Negishi and K. Takakura and F. Hasegawa and Toyohiro Chikyo",

year = "2001",

month = sep,

day = "17",

doi = "10.1063/1.1405001",

language = "English",

volume = "79",

pages = "1804--1806",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

AU - Suemasu, T.

AU - Negishi, Y.

AU - Takakura, K.

AU - Hasegawa, F.

AU - Chikyo, Toyohiro

PY - 2001/9/17

Y1 - 2001/9/17

N2 - We have fabricated Si/β-FeSi2 particles/Si structures by reactive deposition epitaxy for β-FeSi2 and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi2 strongly depended on MBE-Si growth temperature for embedding β-FeSi2 in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi2 active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi2 from which PL was observed was about 9% longer than that of β-FeSi2 without PL or of bulk β-FeSi2.

AB - We have fabricated Si/β-FeSi2 particles/Si structures by reactive deposition epitaxy for β-FeSi2 and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi2 strongly depended on MBE-Si growth temperature for embedding β-FeSi2 in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi2 active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi2 from which PL was observed was about 9% longer than that of β-FeSi2 without PL or of bulk β-FeSi2.

UR - http://www.scopus.com/inward/record.url?scp=0035903387&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035903387&partnerID=8YFLogxK

U2 - 10.1063/1.1405001

DO - 10.1063/1.1405001

M3 - Article

AN - SCOPUS:0035903387

SN - 0003-6951

VL - 79

SP - 1804

EP - 1806

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this