TY - JOUR
T1 - Influence of silicon wafer surface roughness on semiconductor device characteristics
AU - Mori, Keiichiro
AU - Samata, Shuichi
AU - Mitsugi, Noritomo
AU - Teramoto, Akinobu
AU - Kuroda, Rihito
AU - Suwa, Tomoyuki
AU - Hashimoto, Keiichi
AU - Sugawa, Shigetoshi
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/7/1
Y1 - 2020/7/1
N2 - The surface roughness of silicon wafer is one of the most important issues that degrade characteristics of semiconductor devices. The importance of spatial roughness frequency as an influential parameter has been pointed. In this research, the effect of roughness frequency on MOSFET characteristics was studied using samples with different roughness for frequency. From the obtained results, it was found that roughness with a low spatial wavelength affects electron mobility and gate insulating film reliability such as E bd, Q bd and SILC.
AB - The surface roughness of silicon wafer is one of the most important issues that degrade characteristics of semiconductor devices. The importance of spatial roughness frequency as an influential parameter has been pointed. In this research, the effect of roughness frequency on MOSFET characteristics was studied using samples with different roughness for frequency. From the obtained results, it was found that roughness with a low spatial wavelength affects electron mobility and gate insulating film reliability such as E bd, Q bd and SILC.
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U2 - 10.35848/1347-4065/ab918c
DO - 10.35848/1347-4065/ab918c
M3 - Article
AN - SCOPUS:85085639706
SN - 0021-4922
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
M1 - SMMB06
ER -