TY - JOUR
T1 - Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target
AU - Vashaei, Z.
AU - Aikawa, T.
AU - Ohtsuka, M.
AU - Kobatake, H.
AU - Fukuyama, H.
AU - Ikeda, S.
AU - Takada, K.
PY - 2009/1/15
Y1 - 2009/1/15
N2 - Aluminum nitride (AlN) layers were grown on c-sapphire by radio frequency (RF) sputtering in plasma containing a mixture of argon and nitrogen gas using an AlN target. The influence of nitrogen gas fraction, RF power, and sputtering pressure on crystalline quality and growth rate as well as surface morphology were investigated. Crystalline quality improves as nitrogen gas fraction and RF power increase. The growth rate increases as the RF power increases and decreases as the sputtering pressure increases.
AB - Aluminum nitride (AlN) layers were grown on c-sapphire by radio frequency (RF) sputtering in plasma containing a mixture of argon and nitrogen gas using an AlN target. The influence of nitrogen gas fraction, RF power, and sputtering pressure on crystalline quality and growth rate as well as surface morphology were investigated. Crystalline quality improves as nitrogen gas fraction and RF power increase. The growth rate increases as the RF power increases and decreases as the sputtering pressure increases.
KW - A1. Crystal structure
KW - A3. RF sputtering
KW - B2. Aluminum nitride
UR - http://www.scopus.com/inward/record.url?scp=59749104873&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=59749104873&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2008.09.046
DO - 10.1016/j.jcrysgro.2008.09.046
M3 - Article
AN - SCOPUS:59749104873
SN - 0022-0248
VL - 311
SP - 459
EP - 462
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3
ER -