Abstract
The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor phase epitaxy has been investigated over a range of substrate temperature from 500 degree C to 700 degree C. Low temperature photoluminescence from single quantum wells less than 150 A in width has been observed at low excitation levels. Evidence of a graded heterostructure interface was observed in samples grown at higher substrate temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 639-641 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 22 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1983 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)