The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor phase epitaxy has been investigated over a range of substrate temperature from 500 degree C to 700 degree C. Low temperature photoluminescence from single quantum wells less than 150 A in width has been observed at low excitation levels. Evidence of a graded heterostructure interface was observed in samples grown at higher substrate temperatures.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 1983|
ASJC Scopus subject areas
- Physics and Astronomy(all)