@inproceedings{1c4a88d83a0c4606a939ccbce0482fe1,
title = "Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC",
abstract = "The influences of solution flow and lateral temperature distribution on the surface morphology of 4H-SiC single crystal grown from solution was investigated. A flat surface region was enlarged by the seed-rotation rate. The solution flow simulation indicated that the higher rotation rate made the outward solution flow ordered beneath the solution surface. Such a solution flow was thought to be effective to enlarge the flat region of the growth front. Furthermore, a full-flat surface was obtained with a hollow-type graphite rod at a seed-rotation rate of 60 min-1. The simulated results of temperature distribution showed that the hollow-type graphite rod reduced the lateral temperature gradient at the SiC-solution interface. The ordered solution flow and the small temperature gradient at the growth front were found to be effective to make the growth front flat in the solution-growth method.",
keywords = "Crystal growth, Morphology, SiC, Solution flow, Temperature distribution",
author = "Kuniharu Fujii and Koichi Takei and Masahiro Aoshima and Nachimuthu Senguttuvan and Masahiko Hiratani and Toru Ujihara and Yuji Matsumoto and Tomohisa Kato and Kazuhisa Kurashige and Hajime Okumura",
note = "Publisher Copyright: {\textcopyright} (2015) Trans Tech Publications, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",
year = "2015",
doi = "10.4028/www.scientific.net/MSF.821-823.35",
language = "English",
isbn = "9783038354789",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "35--38",
editor = "Didier Chaussende and Gabriel Ferro",
booktitle = "Silicon Carbide and Related Materials 2014",
}