TY - JOUR
T1 - Infrared photodetectors based on graphene van der Waals heterostructures
AU - Ryzhii, V.
AU - Ryzhii, M.
AU - Svintsov, D.
AU - Leiman, V.
AU - Mitin, V.
AU - Shur, M. S.
AU - Otsuji, T.
N1 - Funding Information:
The authors grateful to V Aleshkin, A Dubinov and A Satou for useful discussion and to N Ryabova and S Boubanga-Tombet for assistance. The work at RIEC and UoA was supported by the Japan Society for Promotion of Science (KAKENHI Grants Nos. 23000008 and 16H06361). V R, D S and V L acknowledge the support by the Russian Scientific Foundation (Grants Nos. 14-29-00277 and 16-19-10557) and the Ministry of Education and Science of the Russian Federation (Grant No. 16.19.2014/K). The work at RPI was supported by the US Army Research Laboratory Cooperative Research Agreement.
Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/8
Y1 - 2017/8
N2 - We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors.
AB - We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors.
KW - Graphene
KW - Infrared photodetector
KW - Van der Waals heterostructure
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U2 - 10.1016/j.infrared.2017.01.016
DO - 10.1016/j.infrared.2017.01.016
M3 - Article
AN - SCOPUS:85010550792
SN - 1350-4495
VL - 84
SP - 72
EP - 81
JO - Infrared Physics
JF - Infrared Physics
ER -