Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion

Haruhiko Udono, Yusuke Yamanaka, Masahito Uchikoshi, Minoru Isshiki

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46 Citations (Scopus)


We fabricated pn-junction diodes by thermal diffusion of Ag acceptor into n-type melt-grown Mg2Si single-crystalline substrates (electron concentration=2×1015 cm-3) to investigate the infrared photoresponse of the material. The estimated hole concentration at the p-side of the diode diffused with Ag at 550 °C was 3×1018 cm-3. Current-voltage measurement of the diodes showed sound rectifying characteristics even at 300 K. A clear photoresponsivity with a photon energy threshold of approximately 0.6 eV was observed from the diode, showing promise for application in infrared light detection devices at wavelengths of 1.2-2 μm.

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Issue number2
Publication statusPublished - 2013 Feb


  • A. Inorganic compounds
  • B. Crystal growth
  • D. Electrical properties
  • D. Optical properties


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