Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion

Haruhiko Udono; Yusuke Yamanaka; Masahito Uchikoshi; Minoru Isshiki

doi:10.1016/j.jpcs.2012.10.005

Infrared photoresponse from pn-junction Mg₂Si diodes fabricated by thermal diffusion

Haruhiko Udono, Yusuke Yamanaka, Masahito Uchikoshi, Minoru Isshiki

IMRAM - Collaborative Research Division of Non-ferrousMetallurgy and Environmental Science

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

We fabricated pn-junction diodes by thermal diffusion of Ag acceptor into n-type melt-grown Mg₂Si single-crystalline substrates (electron concentration=2×10¹⁵ cm^-3) to investigate the infrared photoresponse of the material. The estimated hole concentration at the p-side of the diode diffused with Ag at 550 °C was 3×10¹⁸ cm^-3. Current-voltage measurement of the diodes showed sound rectifying characteristics even at 300 K. A clear photoresponsivity with a photon energy threshold of approximately 0.6 eV was observed from the diode, showing promise for application in infrared light detection devices at wavelengths of 1.2-2 μm.

Original language	English
Pages (from-to)	311-314
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	74
Issue number	2
DOIs	https://doi.org/10.1016/j.jpcs.2012.10.005
Publication status	Published - 2013 Feb

Keywords

A. Inorganic compounds
B. Crystal growth
D. Electrical properties
D. Optical properties

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10.1016/j.jpcs.2012.10.005

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title = "Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion",

abstract = "We fabricated pn-junction diodes by thermal diffusion of Ag acceptor into n-type melt-grown Mg2Si single-crystalline substrates (electron concentration=2×1015 cm-3) to investigate the infrared photoresponse of the material. The estimated hole concentration at the p-side of the diode diffused with Ag at 550 °C was 3×1018 cm-3. Current-voltage measurement of the diodes showed sound rectifying characteristics even at 300 K. A clear photoresponsivity with a photon energy threshold of approximately 0.6 eV was observed from the diode, showing promise for application in infrared light detection devices at wavelengths of 1.2-2 μm.",

keywords = "A. Inorganic compounds, B. Crystal growth, D. Electrical properties, D. Optical properties",

author = "Haruhiko Udono and Yusuke Yamanaka and Masahito Uchikoshi and Minoru Isshiki",

note = "Funding Information: This work was supported in part by Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) . The authors would like to thank Dr. M. Nakamura for fruitful discussion.",

year = "2013",

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doi = "10.1016/j.jpcs.2012.10.005",

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AU - Udono, Haruhiko

AU - Yamanaka, Yusuke

AU - Uchikoshi, Masahito

AU - Isshiki, Minoru

N1 - Funding Information: This work was supported in part by Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) . The authors would like to thank Dr. M. Nakamura for fruitful discussion.

PY - 2013/2

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N2 - We fabricated pn-junction diodes by thermal diffusion of Ag acceptor into n-type melt-grown Mg2Si single-crystalline substrates (electron concentration=2×1015 cm-3) to investigate the infrared photoresponse of the material. The estimated hole concentration at the p-side of the diode diffused with Ag at 550 °C was 3×1018 cm-3. Current-voltage measurement of the diodes showed sound rectifying characteristics even at 300 K. A clear photoresponsivity with a photon energy threshold of approximately 0.6 eV was observed from the diode, showing promise for application in infrared light detection devices at wavelengths of 1.2-2 μm.

AB - We fabricated pn-junction diodes by thermal diffusion of Ag acceptor into n-type melt-grown Mg2Si single-crystalline substrates (electron concentration=2×1015 cm-3) to investigate the infrared photoresponse of the material. The estimated hole concentration at the p-side of the diode diffused with Ag at 550 °C was 3×1018 cm-3. Current-voltage measurement of the diodes showed sound rectifying characteristics even at 300 K. A clear photoresponsivity with a photon energy threshold of approximately 0.6 eV was observed from the diode, showing promise for application in infrared light detection devices at wavelengths of 1.2-2 μm.

KW - A. Inorganic compounds

KW - B. Crystal growth

KW - D. Electrical properties

KW - D. Optical properties

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Infrared photoresponse from pn-junction Mg₂Si diodes fabricated by thermal diffusion

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Keywords

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