Infrared reflection spectroscopic investigation of adsorption of SiHx(CH3)4-x on Si surfaces

Masanori Shinohara; Daisei Shoji; Takehiro Maehama; Yosuke Akama; Michio Niwano

doi:10.1002/ecjb.1108

Infrared reflection spectroscopic investigation of adsorption of SiH_x(CH₃)_4-x on Si surfaces

Masanori Shinohara, Daisei Shoji, Takehiro Maehama, Yosuke Akama, Michio Niwano

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Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The adsorption process of methylsilanes [SiH_x(CH₃)_4-x (x = 1-3)] onto Si(100) surfaces were investigated by in situ infrared adsorption spectroscopy in the multiple internal reflection geometry. It was established that the exposure of a clean Si(100) (2 × 1) surface to methylsilanes leads to a selective cleavage of Si-H bonds. The hydrogen atoms and dissociated species produced in the process adsorb on the dangling bonds of Si dimer, thus forming surface-adsorbed hydrate species -SiH, -SiH₂, and -SiH₃. It was demonstrated that adsorption of monomethylsilane occurs in two different modes based on reactions of first and second order. In the adsorption process of the first order, the molecule dissociatively adsorbs on both two dangling bonds of a dimer, while in the adsorption reaction of the second order, the surface adsorbed species -SiH(CH₃) and a pair of hydrogen atoms are adsorbed independently.

Original language	English
Pages (from-to)	59-65
Number of pages	7
Journal	Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume	85
Issue number	5
DOIs	https://doi.org/10.1002/ecjb.1108
Publication status	Published - 2002 May 1

Keywords

Dissociative adsorption
Infrared spectroscopy
Methylsilane
Microelectronic materials
Si(100) surface

ASJC Scopus subject areas

Physics and Astronomy(all)
Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1002/ecjb.1108

Cite this

Infrared reflection spectroscopic investigation of adsorption of SiH_x(CH₃)_4-x on Si surfaces. / Shinohara, Masanori; Shoji, Daisei; Maehama, Takehiro et al.
In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 85, No. 5, 01.05.2002, p. 59-65.

Research output: Contribution to journal › Article › peer-review

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abstract = "The adsorption process of methylsilanes [SiHx(CH3)4-x (x = 1-3)] onto Si(100) surfaces were investigated by in situ infrared adsorption spectroscopy in the multiple internal reflection geometry. It was established that the exposure of a clean Si(100) (2 × 1) surface to methylsilanes leads to a selective cleavage of Si-H bonds. The hydrogen atoms and dissociated species produced in the process adsorb on the dangling bonds of Si dimer, thus forming surface-adsorbed hydrate species -SiH, -SiH2, and -SiH3. It was demonstrated that adsorption of monomethylsilane occurs in two different modes based on reactions of first and second order. In the adsorption process of the first order, the molecule dissociatively adsorbs on both two dangling bonds of a dimer, while in the adsorption reaction of the second order, the surface adsorbed species -SiH(CH3) and a pair of hydrogen atoms are adsorbed independently.",

keywords = "Dissociative adsorption, Infrared spectroscopy, Methylsilane, Microelectronic materials, Si(100) surface",

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AU - Shinohara, Masanori

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AU - Akama, Yosuke

AU - Niwano, Michio

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N2 - The adsorption process of methylsilanes [SiHx(CH3)4-x (x = 1-3)] onto Si(100) surfaces were investigated by in situ infrared adsorption spectroscopy in the multiple internal reflection geometry. It was established that the exposure of a clean Si(100) (2 × 1) surface to methylsilanes leads to a selective cleavage of Si-H bonds. The hydrogen atoms and dissociated species produced in the process adsorb on the dangling bonds of Si dimer, thus forming surface-adsorbed hydrate species -SiH, -SiH2, and -SiH3. It was demonstrated that adsorption of monomethylsilane occurs in two different modes based on reactions of first and second order. In the adsorption process of the first order, the molecule dissociatively adsorbs on both two dangling bonds of a dimer, while in the adsorption reaction of the second order, the surface adsorbed species -SiH(CH3) and a pair of hydrogen atoms are adsorbed independently.

AB - The adsorption process of methylsilanes [SiHx(CH3)4-x (x = 1-3)] onto Si(100) surfaces were investigated by in situ infrared adsorption spectroscopy in the multiple internal reflection geometry. It was established that the exposure of a clean Si(100) (2 × 1) surface to methylsilanes leads to a selective cleavage of Si-H bonds. The hydrogen atoms and dissociated species produced in the process adsorb on the dangling bonds of Si dimer, thus forming surface-adsorbed hydrate species -SiH, -SiH2, and -SiH3. It was demonstrated that adsorption of monomethylsilane occurs in two different modes based on reactions of first and second order. In the adsorption process of the first order, the molecule dissociatively adsorbs on both two dangling bonds of a dimer, while in the adsorption reaction of the second order, the surface adsorbed species -SiH(CH3) and a pair of hydrogen atoms are adsorbed independently.

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