InGaAs enhancement-mode MISFETs using double-layer gate insulator

K. Ishii, T. Sawada, H. Ohno, H. Hasegawa

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8 Citations (Scopus)


In this letter we describe the fabrication of enhancementmode MISFETs on InGaAs grown by liquid-phase epitaxy (LPE) using an anodic Al2O3/anodic native oxide double layer as a gate insulator. The normally-off device of 10 µm gate length shows the effective channel mobility of 1400 cm2/Vs. The interface state density distribution of this double-layer MIS of InGaAs is also reported. The density of 2 × 101 3 cm-2 eV-1 at Ec−0·057 eV and the minimum of 8 × 1011 cm-2 eV-1 near midgap are measured from C/V characteristics.

Original languageEnglish
Pages (from-to)1034-1036
Number of pages3
JournalElectronics Letters
Issue number24
Publication statusPublished - 1982 Nov 25


  • Fieldeffect transistors
  • InGaAs ternary alloy
  • Semiconductor devices and materials


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