InGaAs enhancement-mode MISFETs using double-layer gate insulator

K. Ishii; T. Sawada; H. Ohno; H. Hasegawa

doi:10.1049/el:19820708

InGaAs enhancement-mode MISFETs using double-layer gate insulator

K. Ishii, T. Sawada, H. Ohno, H. Hasegawa

Leadership

Hokkaido University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this letter we describe the fabrication of enhancementmode MISFETs on InGaAs grown by liquid-phase epitaxy (LPE) using an anodic Al₂O₃/anodic native oxide double layer as a gate insulator. The normally-off device of 10 µm gate length shows the effective channel mobility of 1400 cm²/Vs. The interface state density distribution of this double-layer MIS of InGaAs is also reported. The density of 2 × 10^{1 3} cm^-2 eV^-1 at E_c−0·057 eV and the minimum of 8 × 10¹¹ cm^-2 eV^-1 near midgap are measured from C/V characteristics.

Original language	English
Pages (from-to)	1034-1036
Number of pages	3
Journal	Electronics Letters
Volume	18
Issue number	24
DOIs	https://doi.org/10.1049/el:19820708
Publication status	Published - 1982 Nov 25

Keywords

Fieldeffect transistors
InGaAs ternary alloy
Semiconductor devices and materials

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10.1049/el:19820708

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title = "InGaAs enhancement-mode MISFETs using double-layer gate insulator",

abstract = "In this letter we describe the fabrication of enhancementmode MISFETs on InGaAs grown by liquid-phase epitaxy (LPE) using an anodic Al2O3/anodic native oxide double layer as a gate insulator. The normally-off device of 10 µm gate length shows the effective channel mobility of 1400 cm2/Vs. The interface state density distribution of this double-layer MIS of InGaAs is also reported. The density of 2 × 101 3 cm-2 eV-1 at Ec−0·057 eV and the minimum of 8 × 1011 cm-2 eV-1 near midgap are measured from C/V characteristics.",

keywords = "Fieldeffect transistors, InGaAs ternary alloy, Semiconductor devices and materials",

author = "K. Ishii and T. Sawada and H. Ohno and H. Hasegawa",

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doi = "10.1049/el:19820708",

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T1 - InGaAs enhancement-mode MISFETs using double-layer gate insulator

AU - Ishii, K.

AU - Sawada, T.

AU - Ohno, H.

AU - Hasegawa, H.

PY - 1982/11/25

Y1 - 1982/11/25

N2 - In this letter we describe the fabrication of enhancementmode MISFETs on InGaAs grown by liquid-phase epitaxy (LPE) using an anodic Al2O3/anodic native oxide double layer as a gate insulator. The normally-off device of 10 µm gate length shows the effective channel mobility of 1400 cm2/Vs. The interface state density distribution of this double-layer MIS of InGaAs is also reported. The density of 2 × 101 3 cm-2 eV-1 at Ec−0·057 eV and the minimum of 8 × 1011 cm-2 eV-1 near midgap are measured from C/V characteristics.

AB - In this letter we describe the fabrication of enhancementmode MISFETs on InGaAs grown by liquid-phase epitaxy (LPE) using an anodic Al2O3/anodic native oxide double layer as a gate insulator. The normally-off device of 10 µm gate length shows the effective channel mobility of 1400 cm2/Vs. The interface state density distribution of this double-layer MIS of InGaAs is also reported. The density of 2 × 101 3 cm-2 eV-1 at Ec−0·057 eV and the minimum of 8 × 1011 cm-2 eV-1 near midgap are measured from C/V characteristics.

KW - Fieldeffect transistors

KW - InGaAs ternary alloy

KW - Semiconductor devices and materials

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EP - 1036

JO - Electronics Letters

JF - Electronics Letters

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ER -

InGaAs enhancement-mode MISFETs using double-layer gate insulator

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Keywords

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