InGaAsP optical device integration on SOI platform by Ar/O2 plasma assisted bonding

Akio Higo; L. Li; E. Higurashi; M. Sugiyama; Y. Nakano

doi:10.1117/12.2008337

InGaAsP optical device integration on SOI platform by Ar/O₂ plasma assisted bonding

Akio Higo, L. Li, E. Higurashi, M. Sugiyama, Y. Nakano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The hetero-integration of InGaAsP/InP on highly doped silicon micro wire structure for Si hybrid laser using the plasma assisted direct bonding has been carried out. For strong adhesion, bonding assisted pattern was used for the silicon wire to the InGaAsP/InP layers. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAsP layers are measured and compared to the Si/InP bulk bonding. The improvement of the heterointegration with long time annealing was also discussed and realized the direct current injection from Si wire platforms to compound semiconductor active layer for silicon hybrid laser.

Original language	English
Title of host publication	MOEMS and Miniaturized Systems XII
DOIs	https://doi.org/10.1117/12.2008337
Publication status	Published - 2013 Jun 12
Event	MOEMS and Miniaturized Systems XII - San Francisco, CA, United States Duration: 2013 Feb 4 → 2013 Feb 6

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8616
ISSN (Print)	0277-786X

Other

Other	MOEMS and Miniaturized Systems XII
Country/Territory	United States
City	San Francisco, CA
Period	13/2/4 → 13/2/6

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2008337

Cite this

Higo, A, Li, L, Higurashi, E, Sugiyama, M & Nakano, Y 2013, InGaAsP optical device integration on SOI platform by Ar/O₂ plasma assisted bonding. in MOEMS and Miniaturized Systems XII., 86160X, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8616, MOEMS and Miniaturized Systems XII, San Francisco, CA, United States, 13/2/4. https://doi.org/10.1117/12.2008337

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abstract = "The hetero-integration of InGaAsP/InP on highly doped silicon micro wire structure for Si hybrid laser using the plasma assisted direct bonding has been carried out. For strong adhesion, bonding assisted pattern was used for the silicon wire to the InGaAsP/InP layers. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAsP layers are measured and compared to the Si/InP bulk bonding. The improvement of the heterointegration with long time annealing was also discussed and realized the direct current injection from Si wire platforms to compound semiconductor active layer for silicon hybrid laser.",

author = "Akio Higo and L. Li and E. Higurashi and M. Sugiyama and Y. Nakano",

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