TY - GEN
T1 - InGaAsP/InP MQW FP laser and silicon platform integration by direct bonding
AU - Higo, Akio
AU - Li, Ling Han
AU - Higurashi, Eiji
AU - Sugiyama, Masakazu
AU - Nakano, Yoshiaki
PY - 2012
Y1 - 2012
N2 - InGaAsP/InP active layer on silicon heterointegration by Ar/O2 plasma assisted direct bonding in air was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved to realized a direct-current-pumped Fabry-Perot Laser by pulse operation at 43 mA threshold current.
AB - InGaAsP/InP active layer on silicon heterointegration by Ar/O2 plasma assisted direct bonding in air was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved to realized a direct-current-pumped Fabry-Perot Laser by pulse operation at 43 mA threshold current.
UR - http://www.scopus.com/inward/record.url?scp=84866616488&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866616488&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84866616488
SN - 9784885522635
T3 - 10th International Conference on Optical Internet, COIN 2012
SP - 24
EP - 25
BT - 10th International Conference on Optical Internet, COIN 2012
T2 - 10th International Conference on Optical Internet, COIN 2012
Y2 - 29 May 2012 through 31 May 2012
ER -