InGaN/GaN quantum wells grown on freestanding HfO 2 photonic crystals

Yongjin Wang; Tong Wu; Fangren Hu; Hongbo Zhu; Kazuhiro Hane

doi:10.1002/pssc.201100320

InGaN/GaN quantum wells grown on freestanding HfO ₂ photonic crystals

Yongjin Wang, Tong Wu, Fangren Hu, Hongbo Zhu, Kazuhiro Hane

ENG - Finemechanics

Research output: Contribution to journal › Article › peer-review

Abstract

We report here epitaxial growth of InGaN/GaN quantum wells (QWs) on suspended HfO ₂ photonic crystal structures by molecular beam epitaxy (MBE). Suspended HfO ₂ photonic crystals are achieved on silicon substrate by combining film evaporation, electron beam lithography, fast atom beam etching of HfO ₂ film with dry etching of silicon substrate. InGaN/GaN QWs are subsequently grown on suspended HfO ₂ photonic crystal structures by MBE technique, and freestanding HfO ₂ photonic crystal slab can sustain complicated stress change during MBE growth. The reflectance and photoluminescence measurements are performed for epitaxial III-nitride structures.

Original language	English
Pages (from-to)	601-604
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	9
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201100320
Publication status	Published - 2012 Mar 1

Keywords

Fast atom beam etching
Freestanding HfO photonic crystal
Molecular beam epitaxy

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.201100320

Cite this

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title = "InGaN/GaN quantum wells grown on freestanding HfO 2 photonic crystals",

abstract = "We report here epitaxial growth of InGaN/GaN quantum wells (QWs) on suspended HfO 2 photonic crystal structures by molecular beam epitaxy (MBE). Suspended HfO 2 photonic crystals are achieved on silicon substrate by combining film evaporation, electron beam lithography, fast atom beam etching of HfO 2 film with dry etching of silicon substrate. InGaN/GaN QWs are subsequently grown on suspended HfO 2 photonic crystal structures by MBE technique, and freestanding HfO 2 photonic crystal slab can sustain complicated stress change during MBE growth. The reflectance and photoluminescence measurements are performed for epitaxial III-nitride structures.",

keywords = "Fast atom beam etching, Freestanding HfO photonic crystal, Molecular beam epitaxy",

author = "Yongjin Wang and Tong Wu and Fangren Hu and Hongbo Zhu and Kazuhiro Hane",

year = "2012",

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doi = "10.1002/pssc.201100320",

language = "English",

volume = "9",

pages = "601--604",

journal = "Physica Status Solidi C: Conferences",

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TY - JOUR

T1 - InGaN/GaN quantum wells grown on freestanding HfO 2 photonic crystals

AU - Wang, Yongjin

AU - Wu, Tong

AU - Hu, Fangren

AU - Zhu, Hongbo

AU - Hane, Kazuhiro

PY - 2012/3/1

Y1 - 2012/3/1

N2 - We report here epitaxial growth of InGaN/GaN quantum wells (QWs) on suspended HfO 2 photonic crystal structures by molecular beam epitaxy (MBE). Suspended HfO 2 photonic crystals are achieved on silicon substrate by combining film evaporation, electron beam lithography, fast atom beam etching of HfO 2 film with dry etching of silicon substrate. InGaN/GaN QWs are subsequently grown on suspended HfO 2 photonic crystal structures by MBE technique, and freestanding HfO 2 photonic crystal slab can sustain complicated stress change during MBE growth. The reflectance and photoluminescence measurements are performed for epitaxial III-nitride structures.

AB - We report here epitaxial growth of InGaN/GaN quantum wells (QWs) on suspended HfO 2 photonic crystal structures by molecular beam epitaxy (MBE). Suspended HfO 2 photonic crystals are achieved on silicon substrate by combining film evaporation, electron beam lithography, fast atom beam etching of HfO 2 film with dry etching of silicon substrate. InGaN/GaN QWs are subsequently grown on suspended HfO 2 photonic crystal structures by MBE technique, and freestanding HfO 2 photonic crystal slab can sustain complicated stress change during MBE growth. The reflectance and photoluminescence measurements are performed for epitaxial III-nitride structures.

KW - Fast atom beam etching

KW - Freestanding HfO photonic crystal

KW - Molecular beam epitaxy

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