Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure

R. Yasuhara; K. Fujiwara; K. Horiba; H. Kumigashira; M. Kotsugi; M. Oshima; H. Takagi

doi:10.1063/1.3175720

Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure

R. Yasuhara, K. Fujiwara, K. Horiba, H. Kumigashira, M. Kotsugi, M. Oshima, H. Takagi

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

The spatial distribution of chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure has been studied by photoemission electron microscopy. It has been found that the change in resistance that occurs with the application of the first voltage is caused by the formation of a reduction path through the CuO channel between the Pt electrodes. A detailed analysis suggests that Joule-heat-assisted reduction induced by the current flowing through the device may play an important role in the formation of the conductive reduction path.

Original language	English
Article number	012110
Journal	Applied Physics Letters
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.3175720
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3175720

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title = "Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure",

abstract = "The spatial distribution of chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure has been studied by photoemission electron microscopy. It has been found that the change in resistance that occurs with the application of the first voltage is caused by the formation of a reduction path through the CuO channel between the Pt electrodes. A detailed analysis suggests that Joule-heat-assisted reduction induced by the current flowing through the device may play an important role in the formation of the conductive reduction path.",

author = "R. Yasuhara and K. Fujiwara and K. Horiba and H. Kumigashira and M. Kotsugi and M. Oshima and H. Takagi",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (S17101004) from the Japan Society for the Promotion of Science (JSPS). One of the authors, R. Y., acknowledges support from JSPS.",

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AU - Yasuhara, R.

AU - Fujiwara, K.

AU - Horiba, K.

AU - Kumigashira, H.

AU - Kotsugi, M.

AU - Oshima, M.

AU - Takagi, H.

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (S17101004) from the Japan Society for the Promotion of Science (JSPS). One of the authors, R. Y., acknowledges support from JSPS.

PY - 2009

Y1 - 2009

N2 - The spatial distribution of chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure has been studied by photoemission electron microscopy. It has been found that the change in resistance that occurs with the application of the first voltage is caused by the formation of a reduction path through the CuO channel between the Pt electrodes. A detailed analysis suggests that Joule-heat-assisted reduction induced by the current flowing through the device may play an important role in the formation of the conductive reduction path.

AB - The spatial distribution of chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure has been studied by photoemission electron microscopy. It has been found that the change in resistance that occurs with the application of the first voltage is caused by the formation of a reduction path through the CuO channel between the Pt electrodes. A detailed analysis suggests that Joule-heat-assisted reduction induced by the current flowing through the device may play an important role in the formation of the conductive reduction path.

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Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure

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