Initial composition dependence of the critical current density in filamentary NSG123 superconductors

Y. Ikebe, E. Ban, Y. Matsuoka, G. Nishijima, Kazuo Watanabe

Research output: Contribution to journalArticlepeer-review


The effect of the starting composition on the superconducting properties for ternary system (Nd, Sm, Gd)-Ba-Cu-O filaments was systematically investigated. The filaments with the composition of (Nd0.33,Sm0.33,Gd0.33)1.18Ba 2.12Cu3.09Oy (sample A), (Nd0.50,Sm0.25,Gd0.25)1.18Ba 2.12Cu3.09Oy (sample B), (Nd0.25,Sm0.50,Gd0.25)1.18Ba 2.12Cu3.09Oy (sample C) and (Nd0.25,Sm0.25,Gd0.50)1.18Ba 2.12Cu3.09Oy (sample D) were prepared by a solution spinning method. All samples partially melted at temperature range of 1030-1080 °C in flowing 0.1% O2 + Ar exhibited Jc value higher than 104 A/cm2 at 77.3 K and self-field. Among these samples, the best transport Jc value of 7.2 × 104 A/cm2 was attained in sample B with Nd-rich composition. The field dependence of transport Jc value was also examined at various temperatures between 77.3 K and 90 K in applied magnetic fields up to 17 T. In the case of samples A, the Jc value gradually decreased with increasing the applied magnetic field, and the Jc value of 2.4 × 103 A/cm2 at 77.3 K was maintained up to high magnetic fields of 17 T. On the contrary, the Jc value of sample B decreased with increasing the applied magnetic field and the superconductivity disappeared at about 15 T. It was found that the three element ratio in NSG123 contributed to flux pinning in a different manner and affected in Jc behavior in magnetic field.

Original languageEnglish
Pages (from-to)1583-1586
Number of pages4
JournalPhysica C: Superconductivity and its applications
Issue number15-20
Publication statusPublished - 2008 Sept 15


  • Critical current density
  • Filamentary NSG123 superconductor
  • Magnetic field behavior

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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