Initial stage of oxidation of Si(001)-2 × 1 surface studied by X-ray photoelectron spectroscopy

Yoshinao Harada, Masaaki Niwa, Takaharu Nagatomi, Ryuichi Shimizu

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14 Citations (Scopus)


The surface composition of a Si(001)-2 × 1 reconstructed surface after various O2 exposures and the oxidation process in an atomic scale based on the experiments using X-ray photoelcctron spectroscopy have been investigated. We have demonstrated that the initial oxidation process is explained by our modified random bonding layer-by-layer mechanism. The suboxide contents (Si1+ : Si2+ : Si3+) change from 1 : 0 : 0, to 2 : 1 : 0 to 3 : 2 : 1 with increasing O2 exposure. The total suboxide saturates to SiO5/6 which is an intermediate state of the layer-by-layer oxidation, and to a metastable state prior to the nuclcation of the two-dimensional SiO2 islands. The ratio of the bridging oxygen atoms to the on-top oxygen atoms is approximately 4 : 1. The portion of oxygen at the on-top site decreases with increasing O2 exposure. The oxygen atoms preferentially insert into the back bond of the dimer down-atom.

Original languageEnglish
Pages (from-to)560-567
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number2 A
Publication statusPublished - 2000
Externally publishedYes


  • Initial oxidation
  • Si(001)-2 × 1
  • SiO
  • Suboxide
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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