Abstract
The surface composition of a Si(001)-2 × 1 reconstructed surface after various O2 exposures and the oxidation process in an atomic scale based on the experiments using X-ray photoelcctron spectroscopy have been investigated. We have demonstrated that the initial oxidation process is explained by our modified random bonding layer-by-layer mechanism. The suboxide contents (Si1+ : Si2+ : Si3+) change from 1 : 0 : 0, to 2 : 1 : 0 to 3 : 2 : 1 with increasing O2 exposure. The total suboxide saturates to SiO5/6 which is an intermediate state of the layer-by-layer oxidation, and to a metastable state prior to the nuclcation of the two-dimensional SiO2 islands. The ratio of the bridging oxygen atoms to the on-top oxygen atoms is approximately 4 : 1. The portion of oxygen at the on-top site decreases with increasing O2 exposure. The oxygen atoms preferentially insert into the back bond of the dimer down-atom.
| Original language | English |
|---|---|
| Pages (from-to) | 560-567 |
| Number of pages | 8 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 2 A |
| DOIs | |
| Publication status | Published - 2000 |
| Externally published | Yes |
Keywords
- Initial oxidation
- Si(001)-2 × 1
- SiO
- Suboxide
- XPS
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)