Initial stage of SiO2/Si interface formation on Si(111) surface

Takeo Hattori; Hiroshi Nohira; Yoshinari Tamura; Hiroki Ogawa

Initial stage of SiO₂/Si interface formation on Si(111) surface

Takeo Hattori, Hiroshi Nohira, Yoshinari Tamura, Hiroki Ogawa

Research output: Contribution to journal › Article › peer-review

Abstract

The initial stages of SiO₂/Si interface formation on a Si(111) surface were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the SiO₂/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	31
Issue number	5 B
Publication status	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

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title = "Initial stage of SiO2/Si interface formation on Si(111) surface",

abstract = "The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.",

author = "Takeo Hattori and Hiroshi Nohira and Yoshinari Tamura and Hiroki Ogawa",

year = "1992",

language = "English",

volume = "31",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Initial stage of SiO2/Si interface formation on Si(111) surface

AU - Hattori, Takeo

AU - Nohira, Hiroshi

AU - Tamura, Yoshinari

AU - Ogawa, Hiroki

PY - 1992

Y1 - 1992

N2 - The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.

AB - The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.

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M3 - Article

AN - SCOPUS:0026866329

SN - 0021-4922

VL - 31

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 5 B

ER -

Initial stage of SiO₂/Si interface formation on Si(111) surface

Abstract

ASJC Scopus subject areas

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