The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||5 B|
|Publication status||Published - 1992|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)