InN polarity determination by convergent-beam electron diffraction

Toshitsugu Mitate, Seiichiro Mizuno, Hiroko Takahata, Ryu Kakegawa, Takashi Matsuoka, Noriyuki Kuwano

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


To establish an accurate determination technique for the polarity of InN by convergent-beam electron diffraction (CBED), we clarified the influence of the electron incidence direction, film thickness, and the temperature factor B on CBED patterns by simulation. The electron incidence direction of [1 1- 00] and a film thinner than 50 nm were found to be preferable for easy and reliable polarity determination. Using an InN film grown on a (000 1-) GaN template on (0001) sapphire by metalorganic vapor-phase epitaxy, observation of the CBED pattern in the thin region of the film was confirmed from the simulation result. This InN film was clearly determined to have N polarity and the value of B was estimated to be less than 2.0 Å2.

Original languageEnglish
Article number134103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2005 Mar 28


Dive into the research topics of 'InN polarity determination by convergent-beam electron diffraction'. Together they form a unique fingerprint.

Cite this