Innovative Techniques for Fast Growth and Fabrication of High Purity GaN Single Crystals

Daisuke Tomida; Makoto Saito; Quanxi Bao; Tohru Ishiguro; Shigefusa F. Chichibu

doi:10.1007/978-3-030-56305-9_5

Innovative Techniques for Fast Growth and Fabrication of High Purity GaN Single Crystals

Daisuke Tomida, Makoto Saito, Quanxi Bao, Tohru Ishiguro, Shigefusa F. Chichibu

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Abstract

The ammonothermal method involves an upper and lower temperature difference that is provided in an autoclave by a baffle plate, and GaN, which is dissolved in supercritical ammonia in the raw material dissolution region and deposited on a seed crystal in the crystal growth region. Because dissolution and deposition can be continuously performed in an autoclave, this is a suitable method for producing large crystals. The growth of bulk GaN single crystals by the ammonothermal method is currently under development and there remain many indeterminate factors. This chapter describes the technological developments to achieve a high-speed growth and high quality of grown crystals.

Original language	English
Title of host publication	Springer Series in Materials Science
Publisher	Springer Science and Business Media Deutschland GmbH
Pages	65-76
Number of pages	12
DOIs	https://doi.org/10.1007/978-3-030-56305-9_5
Publication status	Published - 2021

Publication series

Name	Springer Series in Materials Science
Volume	304
ISSN (Print)	0933-033X
ISSN (Electronic)	2196-2812

ASJC Scopus subject areas

Materials Science(all)

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10.1007/978-3-030-56305-9_5

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Innovative Techniques for Fast Growth and Fabrication of High Purity GaN Single Crystals. / Tomida, Daisuke; Saito, Makoto; Bao, Quanxi et al.
Springer Series in Materials Science. Springer Science and Business Media Deutschland GmbH, 2021. p. 65-76 (Springer Series in Materials Science; Vol. 304).

Research output: Chapter in Book/Report/Conference proceeding › Chapter

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abstract = "The ammonothermal method involves an upper and lower temperature difference that is provided in an autoclave by a baffle plate, and GaN, which is dissolved in supercritical ammonia in the raw material dissolution region and deposited on a seed crystal in the crystal growth region. Because dissolution and deposition can be continuously performed in an autoclave, this is a suitable method for producing large crystals. The growth of bulk GaN single crystals by the ammonothermal method is currently under development and there remain many indeterminate factors. This chapter describes the technological developments to achieve a high-speed growth and high quality of grown crystals.",

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AU - Ishiguro, Tohru

AU - Chichibu, Shigefusa F.

PY - 2021

Y1 - 2021

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AB - The ammonothermal method involves an upper and lower temperature difference that is provided in an autoclave by a baffle plate, and GaN, which is dissolved in supercritical ammonia in the raw material dissolution region and deposited on a seed crystal in the crystal growth region. Because dissolution and deposition can be continuously performed in an autoclave, this is a suitable method for producing large crystals. The growth of bulk GaN single crystals by the ammonothermal method is currently under development and there remain many indeterminate factors. This chapter describes the technological developments to achieve a high-speed growth and high quality of grown crystals.

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Innovative Techniques for Fast Growth and Fabrication of High Purity GaN Single Crystals

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