TY - JOUR
T1 - InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging
AU - Watanabe, Takayuki
AU - Boubanga-Tombet, Stephane A.
AU - Tanimoto, Yudai
AU - Fateev, Denis
AU - Popov, Viacheslav
AU - Coquillat, Dominique
AU - Knap, Wojciech
AU - Meziani, Yahya M.
AU - Wang, Yuye
AU - Minamide, Hiroaki
AU - Ito, Hiromasa
AU - Otsuji, Taiichi
N1 - Funding Information:
Manuscript received June 4, 2012; revised August 13, 2012; accepted October 16, 2012. Date of publication October 22, 2012; date of current version December 6, 2012. This work was supported in part by the JST-ANR Japan-France International Strategic Collaborative Research Program “Wireless Communication Using Terahertz Plasmonic Nano-ICT Devices” (WITH), the JSPS-RFBR Japan-Russian Joint Research Program, the Russian Foundation for Basic Research under Grant 10-02-93120, Grant 11-02-92101, and Grant 12-02-93105, and the Russian Academy of Sciences Program “Technological Fundamentals of Nanotechnology and Nanomaterials,” and by the Government of the Russian Federation for supporting scientific research projects supervised by leading scientists at Russian institutions under Contract 11.G34.31.0030. The work of Y. M. Meziani was supported in part by the Ministry of Science and Innovation of Spain under Project PPT-120000-20094 and Project TEC-2008-02281 and the Ramón y Cajal Program. This work was performed under the umbrella of the GDR-I Project “Semiconductor Sources and Detectors for Terahertz Frequencies.” The associate editor coordinating the review of this paper and approving it for publication was Dr. Michael S. Shur.
Publisher Copyright:
© 2012 IEEE.
PY - 2013/1
Y1 - 2013/1
N2 - This paper reviews recent advances in the design and performance of our original InP- and GaAs-based plasmonic high-electron-mobility transistors (HEMTs) for ultrahighlysensitive terahertz (THz) sensing and imaging. First, the fundamental theory of plasmonic THz detection is briefly described. Second, single-gate HEMTs with parasitic antennae are introduced as a basic core device structure, and their detection characteristics and sub-THz imaging potentialities are investigated. Third, dual-grating-gate (DGG)-HEMT structures are investigated for broadband highly sensitive detection of THz radiations, and the record sensitivity and the highly-sensitive THz imaging are demonstrated using the InP-based asymmetric DGG-HEMTs. Finally, the obtained results are summarized and future trends are addressed.
AB - This paper reviews recent advances in the design and performance of our original InP- and GaAs-based plasmonic high-electron-mobility transistors (HEMTs) for ultrahighlysensitive terahertz (THz) sensing and imaging. First, the fundamental theory of plasmonic THz detection is briefly described. Second, single-gate HEMTs with parasitic antennae are introduced as a basic core device structure, and their detection characteristics and sub-THz imaging potentialities are investigated. Third, dual-grating-gate (DGG)-HEMT structures are investigated for broadband highly sensitive detection of THz radiations, and the record sensitivity and the highly-sensitive THz imaging are demonstrated using the InP-based asymmetric DGG-HEMTs. Finally, the obtained results are summarized and future trends are addressed.
KW - Asymmetry
KW - Detection
KW - High-electron-mobility transistor (HEMT)
KW - Imaging
KW - Plasmon
KW - Sensing
KW - Terahertz
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U2 - 10.1109/JSEN.2012.2225831
DO - 10.1109/JSEN.2012.2225831
M3 - Article
AN - SCOPUS:84879872278
SN - 1530-437X
VL - 13
SP - 89
EP - 99
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 1
ER -