Abstract
High-speed, small-driving-voltage phase modulator is developed introducing an n-i-n heterostructure in semiconductor layers. A Mach-Zehnder modulator with an electrode length of 3 mm is fabricated with this phase modulator, and we confirmed 100-km single-mode fiber (SMF) transmission at l0 Gbit/s with a push-pull driving voltage of 1.0 V. Additionally, we describe the techniques of high-speed modulation and report an extremely small π voltage (Vπ) of 2.2 V at 40 Gbit/s.
Original language | English |
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Pages (from-to) | 1-9 |
Number of pages | 9 |
Journal | Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) |
Volume | 88 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2005 Aug |
Keywords
- InP
- Mach-Zehnder modulator
- N-i-n structure
- Phase modulator
- Traveling wave electrode