InP-based n-i-n Mach-Zehnder optical modulator

Ken Tsuzuki, Tadao Ishibashi, Hiroshi Yasaka, Yuichi Tohmori

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


High-speed, small-driving-voltage phase modulator is developed introducing an n-i-n heterostructure in semiconductor layers. A Mach-Zehnder modulator with an electrode length of 3 mm is fabricated with this phase modulator, and we confirmed 100-km single-mode fiber (SMF) transmission at l0 Gbit/s with a push-pull driving voltage of 1.0 V. Additionally, we describe the techniques of high-speed modulation and report an extremely small π voltage (Vπ) of 2.2 V at 40 Gbit/s.

Original languageEnglish
Pages (from-to)1-9
Number of pages9
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Issue number8
Publication statusPublished - 2005 Aug


  • InP
  • Mach-Zehnder modulator
  • N-i-n structure
  • Phase modulator
  • Traveling wave electrode


Dive into the research topics of 'InP-based n-i-n Mach-Zehnder optical modulator'. Together they form a unique fingerprint.

Cite this