InP Etchant for Submicron Patterns

Takashi Matsuoka, Haruo Nagai

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


A new chemical etching solution, saturated bromine water (SBW):n HBr:m H2O, has been developed for fabricating submicron patterns on InP and InGaAsP crystal surfaces. The fundamental characteristics, such as etching profiles, depth-to-undercutting etching ratio, and solution stability, are studied using an AZ photoresist mask. The composition of SBW:10 HBr:40 H20 is found to be suitable for the fabrication of an optical grating on InP and InGaAsP crystals. This new etchant permits the fabrication of high performance distributed feedback laser diodes at wavelengths near 1.3 and 1.5 μm.

Original languageEnglish
Pages (from-to)2485-2491
Number of pages7
JournalJournal of the Electrochemical Society
Issue number12
Publication statusPublished - 1986 Dec


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