InP Etchant for Submicron Patterns

Takashi Matsuoka; Haruo Nagai

doi:10.1149/1.2108455

InP Etchant for Submicron Patterns

Takashi Matsuoka, Haruo Nagai

New Industry Creation Hatchery Center (NICHe)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A new chemical etching solution, saturated bromine water (SBW):n HBr:m H₂O, has been developed for fabricating submicron patterns on InP and InGaAsP crystal surfaces. The fundamental characteristics, such as etching profiles, depth-to-undercutting etching ratio, and solution stability, are studied using an AZ photoresist mask. The composition of SBW:10 HBr:40 H₂0 is found to be suitable for the fabrication of an optical grating on InP and InGaAsP crystals. This new etchant permits the fabrication of high performance distributed feedback laser diodes at wavelengths near 1.3 and 1.5 μm.

Original language	English
Pages (from-to)	2485-2491
Number of pages	7
Journal	Journal of the Electrochemical Society
Volume	133
Issue number	12
DOIs	https://doi.org/10.1149/1.2108455
Publication status	Published - 1986 Dec

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title = "InP Etchant for Submicron Patterns",

abstract = "A new chemical etching solution, saturated bromine water (SBW):n HBr:m H2O, has been developed for fabricating submicron patterns on InP and InGaAsP crystal surfaces. The fundamental characteristics, such as etching profiles, depth-to-undercutting etching ratio, and solution stability, are studied using an AZ photoresist mask. The composition of SBW:10 HBr:40 H20 is found to be suitable for the fabrication of an optical grating on InP and InGaAsP crystals. This new etchant permits the fabrication of high performance distributed feedback laser diodes at wavelengths near 1.3 and 1.5 μm.",

author = "Takashi Matsuoka and Haruo Nagai",

year = "1986",

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doi = "10.1149/1.2108455",

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AU - Matsuoka, Takashi

AU - Nagai, Haruo

PY - 1986/12

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AB - A new chemical etching solution, saturated bromine water (SBW):n HBr:m H2O, has been developed for fabricating submicron patterns on InP and InGaAsP crystal surfaces. The fundamental characteristics, such as etching profiles, depth-to-undercutting etching ratio, and solution stability, are studied using an AZ photoresist mask. The composition of SBW:10 HBr:40 H20 is found to be suitable for the fabrication of an optical grating on InP and InGaAsP crystals. This new etchant permits the fabrication of high performance distributed feedback laser diodes at wavelengths near 1.3 and 1.5 μm.

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ER -

InP Etchant for Submicron Patterns

Abstract

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