InP HIGH MOBILITY ENHANCEMENT MISFETs USING ANODICALLY GROWN Al//2O//3-NATIVE OXIDE/InP INTERFACE.

Takayuki Sawada, Hideo Ohno, Hideki Hasegawa

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Cite this

TY - CONF

T1 - InP HIGH MOBILITY ENHANCEMENT MISFETs USING ANODICALLY GROWN Al//2O//3-NATIVE OXIDE/InP INTERFACE.

AU - Sawada, Takayuki

AU - Ohno, Hideo

AU - Hasegawa, Hideki

PY - 1983

Y1 - 1983

UR - http://www.scopus.com/inward/record.url?scp=0020605469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020605469&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0020605469

SP - 593

ER -