InP high mobility enhancement misfets using anodically grown Al2O3-native oxids/InP interface

InP high mobility enhancement misfets using anodically grown Al₂O₃-native oxids/InP interface

Takayuki Sawada, Hideo Ohno, Hideki Hasegawa

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	593
Number of pages	1
Journal	Japanese Journal of Applied Physics
Volume	22
DOIs	https://doi.org/10.7567/JJAPS.22S1.593
Publication status	Published - 1983 Jan

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author = "Takayuki Sawada and Hideo Ohno and Hideki Hasegawa",

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