Abstract
The InP(100)-(2 × 4) surface electronic structure was studied using angle-resolved photoelectron spectroscopy together with synchrotron radiation. We identify three surface states occurring in the gaps of the projected bulk bands. The highest level state, located at binding energy EB = 1.0 eV, is consistent with previous findings. The second and third states, located at EB = 1.8 eV and EB = 4.3 eV, have not been reported previously. All three of these surface states show no discernible dispersion compared with the surface states on InAs(100)-(2 × 4) and GaAs(100)-(2 × 4). This result suggests that the elements of the InP(100)-(2 × 4) surface unit cells are more isolated from each other than they are for the InAs(100)-(2 × 4) or the GaAs(100)-(2 × 4) surfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 609-612 |
| Number of pages | 4 |
| Journal | Journal of Electron Spectroscopy and Related Phenomena |
| Volume | 88-91 |
| Publication status | Published - 1998 Mar 1 |
Keywords
- Electronic structure
- III-V semiconductor
- InP(100)
- Indium phosphide
- Photoelectron spectroscopy
- Valence band
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Radiation
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Spectroscopy
- Physical and Theoretical Chemistry