InP(100)-(2 × 4) surface electronic structure studied by angle-resolved photoelectron spectroscopy

W. R.A. Huff, M. Shimomura, N. Sanada, G. Kaneda, T. Takeuchi, Y. Suzuki, H. W. Yeom, T. Abukawa, S. Kono, Y. Fukuda

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The InP(100)-(2 × 4) surface electronic structure was studied using angle-resolved photoelectron spectroscopy together with synchrotron radiation. We identify three surface states occurring in the gaps of the projected bulk bands. The highest level state, located at binding energy EB = 1.0 eV, is consistent with previous findings. The second and third states, located at EB = 1.8 eV and EB = 4.3 eV, have not been reported previously. All three of these surface states show no discernible dispersion compared with the surface states on InAs(100)-(2 × 4) and GaAs(100)-(2 × 4). This result suggests that the elements of the InP(100)-(2 × 4) surface unit cells are more isolated from each other than they are for the InAs(100)-(2 × 4) or the GaAs(100)-(2 × 4) surfaces.

Original languageEnglish
Pages (from-to)609-612
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Publication statusPublished - 1998 Mar 1


  • Electronic structure
  • III-V semiconductor
  • InP(100)
  • Indium phosphide
  • Photoelectron spectroscopy
  • Valence band

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry


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