A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.
|Number of pages||3|
|Publication status||Published - 1984 Sept 13|
- Lasers and laser applications
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering