InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser

Y. Noguchi; Y. Suzuki; T. Matsuoka; H. Nagai

doi:10.1049/el:19840524

InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser

Y. Noguchi, Y. Suzuki, T. Matsuoka, H. Nagai

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.

Original language	English
Pages (from-to)	769-771
Number of pages	3
Journal	Electronics Letters
Volume	20
Issue number	19
DOIs	https://doi.org/10.1049/el:19840524
Publication status	Published - 1984 Sept 13
Externally published	Yes

Keywords

Lasers and laser applications
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19840524

Cite this

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title = "InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser",

abstract = "A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.",

keywords = "Lasers and laser applications, Semiconductor devices and materials",

author = "Y. Noguchi and Y. Suzuki and T. Matsuoka and H. Nagai",

year = "1984",

month = sep,

day = "13",

doi = "10.1049/el:19840524",

language = "English",

volume = "20",

pages = "769--771",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "19",

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TY - JOUR

T1 - InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser

AU - Noguchi, Y.

AU - Suzuki, Y.

AU - Matsuoka, T.

AU - Nagai, H.

PY - 1984/9/13

Y1 - 1984/9/13

N2 - A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.

AB - A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.

KW - Lasers and laser applications

KW - Semiconductor devices and materials

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U2 - 10.1049/el:19840524

DO - 10.1049/el:19840524

M3 - Article

AN - SCOPUS:0021493816

SN - 0013-5194

VL - 20

SP - 769

EP - 771

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser

Abstract

Keywords

ASJC Scopus subject areas

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