Instability of crystal/melt interface in Si-rich SiGe

M. Mokhtari, K. Fujiwara, G. Takakura, K. Maeda, H. Koizumi, J. Nozawa, S. Uda

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


An investigation was carried out into the instability of the crystal/melt interface in Si-rich SiGe, and the effects of the Ge concentration and growth velocity on the periodicity of zigzag facets at the interface were determined. It was found that the periodicity at the onset of instability became shorter with the increasing growth velocity and Ge concentration.

Original languageEnglish
Article number085104
JournalJournal of Applied Physics
Issue number8
Publication statusPublished - 2018 Aug 28


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