Double-channel planar buried-heterostructure lasers with a multi-quantum well active layer are fabricated by a combination of MOMBE and liquid-phase epitaxy. The lasers exhibit room temperature cw operation at a threshold current of 30 mA and emit at a wavelength of 1.57 µm. The threshold currents of 70% of the laser chips tested are in the range of 30-35 mA. An originally designed MOMBE system with a diffusion-pumped growth chamber is also described.
- Cw operation
- InGaAs/InP MQW