Abstract
Double-channel planar buried-heterostructure lasers with a multi-quantum well active layer are fabricated by a combination of MOMBE and liquid-phase epitaxy. The lasers exhibit room temperature cw operation at a threshold current of 30 mA and emit at a wavelength of 1.57 µm. The threshold currents of 70% of the laser chips tested are in the range of 30-35 mA. An originally designed MOMBE system with a diffusion-pumped growth chamber is also described.
Original language | English |
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Pages (from-to) | L286-L288 |
Journal | Japanese Journal of Applied Physics |
Volume | 30 |
Issue number | 2B |
DOIs | |
Publication status | Published - 1991 Feb |
Keywords
- Cw operation
- DCPBH
- InGaAs/InP MQW
- Laser
- MOMBE