Insulator-to-metal transition in ZnO by electric double layer gating

Hidekazu Shimotani; Haruhiko Asanuma; Atsushi Tsukazaki; Akira Ohtomo; Masashi Kawasaki; Yoshihiro Iwasa

doi:10.1063/1.2772781

Insulator-to-metal transition in ZnO by electric double layer gating

Hidekazu Shimotani, Haruhiko Asanuma, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Yoshihiro Iwasa

Research output: Contribution to journal › Article › peer-review

160 Citations (Scopus)

Abstract

The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall effect measurements showed that a sheet carrier density of 4.2× 1013 cm-2 was achieved. The highest sheet conductance at room temperature was ∼1 mS, which was sufficient to maintain the metallic state down to 10 K. These results strongly suggest the versatility of electric double layer gating for various materials.

Original language	English
Article number	082106
Journal	Applied Physics Letters
Volume	91
Issue number	8
DOIs	https://doi.org/10.1063/1.2772781
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Insulator-to-metal transition in ZnO by electric double layer gating",

abstract = "The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall effect measurements showed that a sheet carrier density of 4.2× 1013 cm-2 was achieved. The highest sheet conductance at room temperature was ∼1 mS, which was sufficient to maintain the metallic state down to 10 K. These results strongly suggest the versatility of electric double layer gating for various materials.",

author = "Hidekazu Shimotani and Haruhiko Asanuma and Atsushi Tsukazaki and Akira Ohtomo and Masashi Kawasaki and Yoshihiro Iwasa",

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AU - Shimotani, Hidekazu

AU - Asanuma, Haruhiko

AU - Tsukazaki, Atsushi

AU - Ohtomo, Akira

AU - Kawasaki, Masashi

AU - Iwasa, Yoshihiro

N1 - Funding Information: The authors thank K. Ueno for useful discussions. This work was partly supported by a Grant-in-Aid for Scientific Research (A) (No. 17204022) and a Grant-in-Aid for Scientific Research on Priority Areas (Nos. 16076201 and 17069003) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

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Y1 - 2007

N2 - The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall effect measurements showed that a sheet carrier density of 4.2× 1013 cm-2 was achieved. The highest sheet conductance at room temperature was ∼1 mS, which was sufficient to maintain the metallic state down to 10 K. These results strongly suggest the versatility of electric double layer gating for various materials.

AB - The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall effect measurements showed that a sheet carrier density of 4.2× 1013 cm-2 was achieved. The highest sheet conductance at room temperature was ∼1 mS, which was sufficient to maintain the metallic state down to 10 K. These results strongly suggest the versatility of electric double layer gating for various materials.

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Insulator-to-metal transition in ZnO by electric double layer gating

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