The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall effect measurements showed that a sheet carrier density of 4.2× 1013 cm-2 was achieved. The highest sheet conductance at room temperature was ∼1 mS, which was sufficient to maintain the metallic state down to 10 K. These results strongly suggest the versatility of electric double layer gating for various materials.
|Journal||Applied Physics Letters|
|Publication status||Published - 2007|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)