Integrated Double Heterostructure Ga0.47In0.53As Photoreceiver with Automatic Gain Control

Joseph Barnard; Colin E.C. Wood; Lester F. Eastman; Hideo Ohno

doi:10.1109/EDL.1981.25320

Integrated Double Heterostructure Ga0.47In0.53As Photoreceiver with Automatic Gain Control

Joseph Barnard, Colin E.C. Wood, Lester F. Eastman, Hideo Ohno

Leadership

Cornell University

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The first operation of an integrated differential notch-type photoconductor and dual gate (DG) double heterostructure (DH) MESFET in Ga0.47In0.53As is reported. The starting material was grown by molecular beam epitaxy on a semi-insulating InP substrate. A 2 mW HeNe laser with a spot diameter of 0.5 mm could modulate the drain current by 300 µA with the upper gate suitably biased.

Original language	English
Pages (from-to)	7-9
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	2
Issue number	1
DOIs	https://doi.org/10.1109/EDL.1981.25320
Publication status	Published - 1981 Jan

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10.1109/EDL.1981.25320

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abstract = "The first operation of an integrated differential notch-type photoconductor and dual gate (DG) double heterostructure (DH) MESFET in Ga0.47In0.53As is reported. The starting material was grown by molecular beam epitaxy on a semi-insulating InP substrate. A 2 mW HeNe laser with a spot diameter of 0.5 mm could modulate the drain current by 300 µA with the upper gate suitably biased.",

author = "Joseph Barnard and Wood, {Colin E.C.} and Eastman, {Lester F.} and Hideo Ohno",

year = "1981",

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AU - Eastman, Lester F.

AU - Ohno, Hideo

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AB - The first operation of an integrated differential notch-type photoconductor and dual gate (DG) double heterostructure (DH) MESFET in Ga0.47In0.53As is reported. The starting material was grown by molecular beam epitaxy on a semi-insulating InP substrate. A 2 mW HeNe laser with a spot diameter of 0.5 mm could modulate the drain current by 300 µA with the upper gate suitably biased.

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Integrated Double Heterostructure Ga0.47In0.53As Photoreceiver with Automatic Gain Control

Abstract

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