Integrated micromechanical cantilever magnetometry of Ga1 - xMnxAs

J. G.E. Harris, D. D. Awschalom, F. Matsukura, H. Ohno, K. D. Maranowski, A. C. Gossard

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)


We have developed a technique for fabricating submicron GaAs micromechanical cantilevers into which lithographically patterned samples grown by molecular beam epitaxy or evaporative deposition are integrated. The torque sensitivity of the 100-nm-thick cantilevers makes them ideal for torsional magnetometry of nanometer-scale, anisotropic samples. We present measurements on samples of the ferromagnetic semiconductor Ga1 - xMnxAs at temperatures from 350 mK to 65 K and in fields from 0 to 8 T. By measuring the shift in the resonant frequency of the cantilevers, we demonstrate a moment sensitivity of 3 × 106 μB at 0.1 T, an improvement of nearly five orders of magnitude upon existing torsional magnetometers.

Original languageEnglish
Pages (from-to)1140-1142
Number of pages3
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 1999 Aug 23


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