Integration of BST varactors with surface acoustic wave device by film transfer technology for tunable RF filters

Hideki Hirano, Tetsuya Kimura, Ivoyl P. Koutsaroff, Michio Kadota, Ken Ya Hashimoto, Masayoshi Esashi, Shuji Tanaka

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

This paper presents a film transfer process to integrate barium strontium titanate (BST) metal-insulator-metal (MIM) structures with surface acoustic wave (SAW) devices on a lithium niobate (LN) substrate. A high-quality BST film grown on a Si substrate above 650 °C was patterned into the MIM structures, and transferred to a LN substrate below 130 °C by Ar-plasma-activated Au-Au bonding and the Si lost wafer process. Simple test SAW devices with the transferred BST variable capacitors (VCs) were fabricated and characterized. The resonance frequency of a one-port SAW resonator with the VC connected in series changed from 999 to 1018 MHz, when a dc bias voltage of 3 V was applied to the VC. Although the observed frequency tuning range was smaller than expected due to the degradation of BST in the process, the experimental result demonstrated that a tunable SAW filter with the transferred BST VCs was feasible.

Original languageEnglish
Article number025005
JournalJournal of Micromechanics and Microengineering
Volume23
Issue number2
DOIs
Publication statusPublished - 2013 Feb

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