Integration of Si p-i-n diodes for light emitter and detector with optical waveguides

Atsushi Yamada; Masao Sakuraba; Junichi Murota

doi:10.1016/j.mssp.2004.09.108

Integration of Si p-i-n diodes for light emitter and detector with optical waveguides

Atsushi Yamada, Masao Sakuraba, Junichi Murota

RIEC - Computing System Platforms Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Si p-i-n diodes for light emitters and detectors with optical waveguides have been integrated on silicon-on-insulator (SOI) substrates, and photo detection from the light emitter has been investigated. It is found that photodiode (PD) current at reverse bias is well normalized by the light-emitting diode (LED) current at forward bias. From the comparison between PD characteristics with and without optical waveguide, it is confirmed that increase of the PD current is mainly caused by light incidence, not by thermal effect due to LED heating. This means that the PD current is generated by higher energy photons than the energy bandgap of Si. Therefore, it is concluded that, even for the same structures of PD as LED of Si p-i-n, light emitted from LED is detected by PD.

Original language	English
Pages (from-to)	435-438
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	8
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mssp.2004.09.108
Publication status	Published - 2005 Feb

Keywords

Light-emitting diode
Optical interconnection
Photodiode
Si
Waveguide

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10.1016/j.mssp.2004.09.108

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@article{d609e15c11cf461e948887ceffcf8b56,

title = "Integration of Si p-i-n diodes for light emitter and detector with optical waveguides",

abstract = "Si p-i-n diodes for light emitters and detectors with optical waveguides have been integrated on silicon-on-insulator (SOI) substrates, and photo detection from the light emitter has been investigated. It is found that photodiode (PD) current at reverse bias is well normalized by the light-emitting diode (LED) current at forward bias. From the comparison between PD characteristics with and without optical waveguide, it is confirmed that increase of the PD current is mainly caused by light incidence, not by thermal effect due to LED heating. This means that the PD current is generated by higher energy photons than the energy bandgap of Si. Therefore, it is concluded that, even for the same structures of PD as LED of Si p-i-n, light emitted from LED is detected by PD.",

keywords = "Light-emitting diode, Optical interconnection, Photodiode, Si, Waveguide",

author = "Atsushi Yamada and Masao Sakuraba and Junichi Murota",

note = "Funding Information: The authors are grateful to Prof. L. C. Kimerling of MIT and Prof. K. Wada of University of Tokyo for their detailed comments and suggestions about Si nitride optical waveguide. This work was partially supported by Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.",

year = "2005",

month = feb,

doi = "10.1016/j.mssp.2004.09.108",

language = "English",

volume = "8",

pages = "435--438",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd.",

number = "1-3 SPEC. ISS.",

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TY - JOUR

T1 - Integration of Si p-i-n diodes for light emitter and detector with optical waveguides

AU - Yamada, Atsushi

AU - Sakuraba, Masao

AU - Murota, Junichi

N1 - Funding Information: The authors are grateful to Prof. L. C. Kimerling of MIT and Prof. K. Wada of University of Tokyo for their detailed comments and suggestions about Si nitride optical waveguide. This work was partially supported by Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.

PY - 2005/2

Y1 - 2005/2

N2 - Si p-i-n diodes for light emitters and detectors with optical waveguides have been integrated on silicon-on-insulator (SOI) substrates, and photo detection from the light emitter has been investigated. It is found that photodiode (PD) current at reverse bias is well normalized by the light-emitting diode (LED) current at forward bias. From the comparison between PD characteristics with and without optical waveguide, it is confirmed that increase of the PD current is mainly caused by light incidence, not by thermal effect due to LED heating. This means that the PD current is generated by higher energy photons than the energy bandgap of Si. Therefore, it is concluded that, even for the same structures of PD as LED of Si p-i-n, light emitted from LED is detected by PD.

AB - Si p-i-n diodes for light emitters and detectors with optical waveguides have been integrated on silicon-on-insulator (SOI) substrates, and photo detection from the light emitter has been investigated. It is found that photodiode (PD) current at reverse bias is well normalized by the light-emitting diode (LED) current at forward bias. From the comparison between PD characteristics with and without optical waveguide, it is confirmed that increase of the PD current is mainly caused by light incidence, not by thermal effect due to LED heating. This means that the PD current is generated by higher energy photons than the energy bandgap of Si. Therefore, it is concluded that, even for the same structures of PD as LED of Si p-i-n, light emitted from LED is detected by PD.

KW - Light-emitting diode

KW - Optical interconnection

KW - Photodiode

KW - Si

KW - Waveguide

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U2 - 10.1016/j.mssp.2004.09.108

DO - 10.1016/j.mssp.2004.09.108

M3 - Article

AN - SCOPUS:13244272287

SN - 1369-8001

VL - 8

SP - 435

EP - 438

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1-3 SPEC. ISS.

ER -

Integration of Si p-i-n diodes for light emitter and detector with optical waveguides

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Keywords

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