Abstract
We developed an intensity autocorrelation measurement technique using the surface second harmonic generation (SHG) of a β-BaB2O 4 crystal to characterize picosecond optical pulses at 402nm from a GaInN mode-locked semiconductor laser diode (MLLD). This technique enabled us to precisely evaluate the pulse width at 402 nm, and the shortest pulse width of 1.6 ps was achieved from the GaInN MLLD operating under a reverse bias voltage of -25 V applied to a saturable absorber.
Original language | English |
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Article number | 122702 |
Journal | Applied Physics Express |
Volume | 3 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2010 Dec 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)