Interaction of Ga adsorbates with dangling bonds on the hydrogen terminated Si(100) surface

Tomihiro Hashizume; Seiji Heike; Mark I. Lutwyche; Satoshi Watanabe; Ken Nakajima; Toshio Nishi; Yasuo Wada

doi:10.1143/jjap.35.l1085

Interaction of Ga adsorbates with dangling bonds on the hydrogen terminated Si(100) surface

Tomihiro Hashizume, Seiji Heike, Mark I. Lutwyche, Satoshi Watanabe, Ken Nakajima, Toshio Nishi, Yasuo Wada

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

Adsorption of Ga on the hydrogen terminated Si(100)-2 x 1-H surface has been investigated by scanning tunneling microscopy (STM). We have found that the thermally deposited Ga atoms preferentially adsorb on the hydrogen-missing dangling bonds and on the surface impurities. We desorb hydrogen atoms by the STM current and fabricate atomic-scale dangling-bond wires, in the similar way as was reported by Lyding et al. [Appl. Phys. Lett. 64 (1994) 2010]. In order to fabricate more detailed dangling bond structures, several methods of manipulating (detaching, attaching and moving) the individual hydrogen atoms are tested. We are able to thermally deposit Ga atoms on a dangling-bond wire and fabricate an atomic-scale Ga wire on the Si surface.

Original language	English
Pages (from-to)	L1085-L1088
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	35
Issue number	8 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.35.l1085
Publication status	Published - 1996 Aug 15
Externally published	Yes

Keywords

Adsorption
Atomic wire
Dangling bond
Ga
Hydrogen terminated
Si(100)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.35.l1085

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@article{17d1d7f5265c4f90a297fa4a529b7b4d,

title = "Interaction of Ga adsorbates with dangling bonds on the hydrogen terminated Si(100) surface",

abstract = "Adsorption of Ga on the hydrogen terminated Si(100)-2 x 1-H surface has been investigated by scanning tunneling microscopy (STM). We have found that the thermally deposited Ga atoms preferentially adsorb on the hydrogen-missing dangling bonds and on the surface impurities. We desorb hydrogen atoms by the STM current and fabricate atomic-scale dangling-bond wires, in the similar way as was reported by Lyding et al. [Appl. Phys. Lett. 64 (1994) 2010]. In order to fabricate more detailed dangling bond structures, several methods of manipulating (detaching, attaching and moving) the individual hydrogen atoms are tested. We are able to thermally deposit Ga atoms on a dangling-bond wire and fabricate an atomic-scale Ga wire on the Si surface.",

keywords = "Adsorption, Atomic wire, Dangling bond, Ga, Hydrogen terminated, Si(100)",

author = "Tomihiro Hashizume and Seiji Heike and Lutwyche, {Mark I.} and Satoshi Watanabe and Ken Nakajima and Toshio Nishi and Yasuo Wada",

year = "1996",

month = aug,

day = "15",

doi = "10.1143/jjap.35.l1085",

language = "English",

volume = "35",

pages = "L1085--L1088",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 SUPPL. B",

}

TY - JOUR

T1 - Interaction of Ga adsorbates with dangling bonds on the hydrogen terminated Si(100) surface

AU - Hashizume, Tomihiro

AU - Heike, Seiji

AU - Lutwyche, Mark I.

AU - Watanabe, Satoshi

AU - Nakajima, Ken

AU - Nishi, Toshio

AU - Wada, Yasuo

PY - 1996/8/15

Y1 - 1996/8/15

N2 - Adsorption of Ga on the hydrogen terminated Si(100)-2 x 1-H surface has been investigated by scanning tunneling microscopy (STM). We have found that the thermally deposited Ga atoms preferentially adsorb on the hydrogen-missing dangling bonds and on the surface impurities. We desorb hydrogen atoms by the STM current and fabricate atomic-scale dangling-bond wires, in the similar way as was reported by Lyding et al. [Appl. Phys. Lett. 64 (1994) 2010]. In order to fabricate more detailed dangling bond structures, several methods of manipulating (detaching, attaching and moving) the individual hydrogen atoms are tested. We are able to thermally deposit Ga atoms on a dangling-bond wire and fabricate an atomic-scale Ga wire on the Si surface.

AB - Adsorption of Ga on the hydrogen terminated Si(100)-2 x 1-H surface has been investigated by scanning tunneling microscopy (STM). We have found that the thermally deposited Ga atoms preferentially adsorb on the hydrogen-missing dangling bonds and on the surface impurities. We desorb hydrogen atoms by the STM current and fabricate atomic-scale dangling-bond wires, in the similar way as was reported by Lyding et al. [Appl. Phys. Lett. 64 (1994) 2010]. In order to fabricate more detailed dangling bond structures, several methods of manipulating (detaching, attaching and moving) the individual hydrogen atoms are tested. We are able to thermally deposit Ga atoms on a dangling-bond wire and fabricate an atomic-scale Ga wire on the Si surface.

KW - Adsorption

KW - Atomic wire

KW - Dangling bond

KW - Ga

KW - Hydrogen terminated

KW - Si(100)

UR - http://www.scopus.com/inward/record.url?scp=0002797825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0002797825&partnerID=8YFLogxK

U2 - 10.1143/jjap.35.l1085

DO - 10.1143/jjap.35.l1085

M3 - Article

AN - SCOPUS:0002797825

SN - 0021-4922

VL - 35

SP - L1085-L1088

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 8 SUPPL. B

ER -

Interaction of Ga adsorbates with dangling bonds on the hydrogen terminated Si(100) surface

Abstract

Keywords

ASJC Scopus subject areas

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