Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures

V. Ya Aleshkin; A. A. Dubinov; S. V. Morozov; M. Ryzhii; T. Otsuji; V. Mitin; M. S. Shur; V. Ryzhii

doi:10.1364/OME.8.001349

Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures

V. Ya Aleshkin, A. A. Dubinov, S. V. Morozov, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur, V. Ryzhii

RIEC - Information Communication Platforms Division

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.

Original language	English
Pages (from-to)	1349-1358
Number of pages	10
Journal	Optical Materials Express
Volume	8
Issue number	5
DOIs	https://doi.org/10.1364/OME.8.001349
Publication status	Published - 2018 May 1

Access to Document

10.1364/OME.8.001349

Cite this

@article{5cb72bbb8838474a84a7d3b9651e6886,

title = "Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures",

abstract = "We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.",

author = "Aleshkin, {V. Ya} and Dubinov, {A. A.} and Morozov, {S. V.} and M. Ryzhii and T. Otsuji and V. Mitin and Shur, {M. S.} and V. Ryzhii",

note = "Publisher Copyright: {\textcopyright} 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.",

year = "2018",

month = may,

day = "1",

doi = "10.1364/OME.8.001349",

language = "English",

volume = "8",

pages = "1349--1358",

journal = "Optical Materials Express",

issn = "2159-3930",

publisher = "Optica Publishing Group",

number = "5",

}

TY - JOUR

T1 - Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures

AU - Aleshkin, V. Ya

AU - Dubinov, A. A.

AU - Morozov, S. V.

AU - Ryzhii, M.

AU - Otsuji, T.

AU - Mitin, V.

AU - Shur, M. S.

AU - Ryzhii, V.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.

AB - We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=85046646704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85046646704&partnerID=8YFLogxK

U2 - 10.1364/OME.8.001349

DO - 10.1364/OME.8.001349

M3 - Article

AN - SCOPUS:85046646704

SN - 2159-3930

VL - 8

SP - 1349

EP - 1358

JO - Optical Materials Express

JF - Optical Materials Express

IS - 5

ER -

Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this