Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures

V. Ya Aleshkin, A. A. Dubinov, S. V. Morozov, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur, V. Ryzhii

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.

Original languageEnglish
Pages (from-to)1349-1358
Number of pages10
JournalOptical Materials Express
Issue number5
Publication statusPublished - 2018 May 1


Dive into the research topics of 'Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures'. Together they form a unique fingerprint.

Cite this