Interdefect correlation during thermal recovery of EL2 in semi-insulating GaAs: Proposal of a three-center-complex model

A. Fukuyama; T. Ikari; Y. Akashi; M. Suemitsu

Interdefect correlation during thermal recovery of EL2 in semi-insulating GaAs: Proposal of a three-center-complex model

A. Fukuyama, T. Ikari, Y. Akashi, M. Suemitsu

Information Devices Division

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Time evolution of EL2 thermal recovery has been investigated in detail by a piezoelectric photothermal method. Results showed a simple saturating behavior for T> 120 K and a sigmoid-function-like behavior for T< 120 K, which were both quantitatively analyzed with an autocatalytic-reaction rate equation. The latter recovery mode indicates correlation between defects, for which recovery promotion by charge transfers from recovered to unrecovered EL2 defects can be suggested. A three-center-complex model (V_As-AS_Ga-Ga_As) is proposed for the microstructure of EL2.

Original language	English
Article number	113202
Pages (from-to)	1132021-1132024
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	67
Issue number	11
Publication status	Published - 2003 Mar

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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title = "Interdefect correlation during thermal recovery of EL2 in semi-insulating GaAs: Proposal of a three-center-complex model",

abstract = "Time evolution of EL2 thermal recovery has been investigated in detail by a piezoelectric photothermal method. Results showed a simple saturating behavior for T> 120 K and a sigmoid-function-like behavior for T< 120 K, which were both quantitatively analyzed with an autocatalytic-reaction rate equation. The latter recovery mode indicates correlation between defects, for which recovery promotion by charge transfers from recovered to unrecovered EL2 defects can be suggested. A three-center-complex model (VAs-ASGa-GaAs) is proposed for the microstructure of EL2.",

author = "A. Fukuyama and T. Ikari and Y. Akashi and M. Suemitsu",

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T1 - Interdefect correlation during thermal recovery of EL2 in semi-insulating GaAs

T2 - Proposal of a three-center-complex model

AU - Fukuyama, A.

AU - Ikari, T.

AU - Akashi, Y.

AU - Suemitsu, M.

PY - 2003/3

Y1 - 2003/3

N2 - Time evolution of EL2 thermal recovery has been investigated in detail by a piezoelectric photothermal method. Results showed a simple saturating behavior for T> 120 K and a sigmoid-function-like behavior for T< 120 K, which were both quantitatively analyzed with an autocatalytic-reaction rate equation. The latter recovery mode indicates correlation between defects, for which recovery promotion by charge transfers from recovered to unrecovered EL2 defects can be suggested. A three-center-complex model (VAs-ASGa-GaAs) is proposed for the microstructure of EL2.

AB - Time evolution of EL2 thermal recovery has been investigated in detail by a piezoelectric photothermal method. Results showed a simple saturating behavior for T> 120 K and a sigmoid-function-like behavior for T< 120 K, which were both quantitatively analyzed with an autocatalytic-reaction rate equation. The latter recovery mode indicates correlation between defects, for which recovery promotion by charge transfers from recovered to unrecovered EL2 defects can be suggested. A three-center-complex model (VAs-ASGa-GaAs) is proposed for the microstructure of EL2.

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M3 - Article

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SN - 0163-1829

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 11

M1 - 113202

ER -

Interdefect correlation during thermal recovery of EL2 in semi-insulating GaAs: Proposal of a three-center-complex model

Abstract

ASJC Scopus subject areas

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